Vishay Intertechnology, Inc. 40V 60A MOSFET Transistor SIE812DF-T1-E3

Description
MOSFET N-CH 40V 60A 10POLARPAK Product overview: SIE812DF-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIE812DF-T1-E3 can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 40V 60A 10POLARPAK Product overview: SIE812DF-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIE812DF-T1-E3 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore
40V 60A MOSFET Transistor
278-SIE812DF-T1-E3
40V 60A MOSFET Transistor 278-SIE812DF-T1-E3
MOSFET N-CH 40V 60A 10POLARPAK Product overview: SIE812DF-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIE812DF-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 40V 60A 10POLARPAK Product overview: SIE812DF-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIE812DF-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE812DF-T1-E3 - 117358-SIE812DF-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE812DF-T1-E3
117358-SIE812DF-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE812DF-T1-E3 117358-SIE812DF-T1-E3
Manufacturer: Vishay Win Source Part Number: 117358-SIE812DF-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 10-PolarPAK (L) Dimension: 10-PolarPAK (L) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 170nC @ 10V Max Input Capacitance: 8300pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.6 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 117358-SIE812DF-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 10-PolarPAK (L)
Dimension: 10-PolarPAK (L)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 170nC @ 10V
Max Input Capacitance: 8300pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.6 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SIE812DF-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIE812DF-T1-E3TR-ND
Single FETs, MOSFETs SIE812DF-T1-E3TR-ND
N-Channel 40V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

N-Channel 40V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIE812DF-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIE812DF-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIE812DF-T1-E3
MOSFET N-CH 40V 60A 10POLARPAK

MOSFET N-CH 40V 60A 10POLARPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 40V 60A 125W 2.6mohm @ 10V

MOSFET 40V 60A 125W 2.6mohm @ 10V

Buy Now Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-SIE812DF-T1-E3 117358-SIE812DF-T1-E3 SIE812DF-T1-E3TR-ND SIE812DF-T1-E3 SIE812DF-T1-E3
Product Name 40V 60A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE812DF-T1-E3 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
PD 5200 milliwatts 5200 to 125000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type Tape & Reel (TR) SOT3; 10-PolarPAK (L) 10-PolarPAK® (L) 10-PolarPAKR (L)
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