N-Channel 40V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)
Manufacturer: Vishay
Win Source Part Number: 117358-SIE812DF-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 10-PolarPAK (L)
Dimension: 10-PolarPAK (L)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 170nC @ 10V
Max Input Capacitance: 8300pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.6 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
MOSFET N-CH 40V 60A 10POLARPAK
MOSFET 40V 60A 125W 2.6mohm @ 10V
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIE812DF-T1-E3TR-ND | 117358-SIE812DF-T1-E3 | SIE812DF-T1-E3 | SIE812DF-T1-E3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE812DF-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | ||
| Package Type | 10-PolarPAK® (L) | SOT3; 10-PolarPAK (L) | 10-PolarPAKR (L) | |
| V(BR)DSS | 40 volts |
