Vishay Intertechnology, Inc. Single FETs, MOSFETs SIE808DF-T1-E3

MOSFET N-CH 20V 60A 10POLARPAK

N-CH MOSFET 20V 45A 1.6mR TrenchFET Surface Mount Product overview: SIE808DF-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 20V, 45A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 45A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SIE808DF-T1-E3 can be used for catalog matching and distributor lookup.

N-Channel 20V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

Manufacturer: Vishay
Win Source Part Number: 1096401-SIE808DF-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 10-PolarPAK (L)
Dimension: 10-PolarPAK (L)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 155nC @ 10V
Max Input Capacitance: 8800pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.6 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance