Manufacturer: Vishay
Win Source Part Number: 124963-SIE802DF-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 10-PolarPAK (L)
Dimension: 10-PolarPAK (L)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 2.7V @ 250μA
Max Gate Charge: 160nC @ 10V
Max Input Capacitance: 7000pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.9 mOhm @ 23.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
N-Channel 30V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)
MOSFET 30V 60A 125W 1.9mohm @ 10V
MOSFET N-CH 30V 60A 10POLARPAK
MOSFET N-CH 30V 60A 10-POLARPAK
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 124963-SIE802DF-T1-E3 | SIE802DF-T1-E3TR-ND | SIE802DF-T1-E3 | SIE802DF-T1-E3 | 880-SIE802DF-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE802DF-T1-E3 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 30V 60A 10-POLARPAK |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | |||
| PD | 5200 to 125000 milliwatts | 5200 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | SOT3; 10-PolarPAK (L) | 10-PolarPAK® (L) | 10-PolarPAKR (L) |
