Vishay Intertechnology, Inc. Single FETs, MOSFETs SIE800DF-T1-GE3

Description
N-Channel 30V 50A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (S)
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Description
N-Channel 30V 50A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (S)
Request a Quote Datasheet

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Single FETs, MOSFETs - SIE800DF-T1-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIE800DF-T1-GE3-ND
Single FETs, MOSFETs SIE800DF-T1-GE3-ND
N-Channel 30V 50A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (S)

N-Channel 30V 50A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (S)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277518-SIE800DF-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277518-SIE800DF-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277518-SIE800DF-T1-GE3
Win Source Part Number: 1277518-SIE800DF-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 5.2W (Ta), 104W (Tc) Package / Case: 10-PolarPAK® (S) Supplier Device Package: 10-PolarPAK® (S) Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 82 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIE800 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1277518-SIE800DF-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
Package / Case: 10-PolarPAK® (S)
Supplier Device Package: 10-PolarPAK® (S)
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 82 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIE800
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIE800DF-T1-GE3 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIE800DF-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIE800DF-T1-GE3
MOSFET N-CH 30V 50A 10POLARPAK

MOSFET N-CH 30V 50A 10POLARPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors Transistors RF Transistors
Product Number SIE800DF-T1-GE3-ND 1277518-SIE800DF-T1-GE3 SIE800DF-T1-GE3
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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