Win Source Part Number: 1339063-SIDR610DP-T1
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Power Dissipation (Max): 6.25W (Ta) , 125W (Tc)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8DC
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIDR610
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) , 39.6A (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
N-Channel 200V 8.9A (Ta), 39.6A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
MOSFET 200V Vds -/+20V Vgs PowerPAK SO-8DC
MOSFET N-CH 200V 8.9A/39.6A PPAK
MOSFET N-CH 200V 8.9A/39.6A PPAK
MOSFET, N-CH, 200V, 39.6A, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:39.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0239ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1339063-SIDR610DP-T1-GE3 | SIDR610DP-T1-GE3TR-ND | SIDR610DP-T1-GE3 | SIDR610DP-T1-GE3 | SIDR610DP-T1-GE3 | 99AC0534 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 200V, 39.6A, 125W; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| PD | 6250 to 125000 milliwatts | 6250 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SO-8; SOT3 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAKR SO-8 | SO-8; PowerPAK® SO-8 | TO-3 | |
| Packing Method | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
