N-Channel 40V 64.6A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
N-Channel 40V 64.6A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
N-Channel 40V 64.6A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
Trans MOSFET N-CH 40V 64.6A 8-Pin PowerPAK SO EP T/R Product overview: SIDR402DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 64.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 64.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIDR402DP-T1-GE3
Win Source Part Number: 1277627-SIDR402DP-T1
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8DC
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V
Vgs (Max): +20V, -16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 69 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIDR402DP-T1-GE3CT,S
Base Product Number: SIDR402
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 40V 64.6A/100A PPAK
MOSFET 40V Vds 20V Vgs PowerPAK SO-8DC
MOSFET, N-CH, 40V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; PowerRoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIDR402DP-T1-GE3TR-ND | 278-SIDR402DP-T1-GE3 | 1277627-SIDR402DP-T1-GE3 | SIDR402DP-T1-GE3 | SIDR402DP-T1-GE3 | 78AC6501 |
| Product Name | Single FETs, MOSFETs | 40V 64.6A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 40V, 100A, 150Deg C, 125W; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel | ||||
| Package Type | SO-8; PowerPAK® SO-8 | Tape and Reel | SO-8; SOT3 | SO-8; PowerPAKR SO-8 | TO-3 | |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 40 volts | |||||
| PD | 6250 milliwatts |
