Vishay Precision Group Single FETs, MOSFETs SIDR392DP-T1-GE3

N-Channel 30V 82A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC

N-Channel 30V 82A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC

N-Channel 30V 82A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC

Win Source Part Number: 1277626-SIDR392DP-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.62mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8DC
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 15 V
Vgs (Max): +20V, -16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 56 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIDR392DP-T1-GE3CT,SIDR392DP-T1-GE3TR,SIDR392DP-T1-GE3DKR
Base Product Number: SIDR392
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V