Mosfet Array 2 N-Channel (Dual) 20V 1.5A 3.1W Surface Mount PowerPAK® SC-75-6L Dual
Mosfet Array 2 N-Channel (Dual) 20V 1.5A 3.1W Surface Mount PowerPAK® SC-75-6L Dual
Mosfet Array 2 N-Channel (Dual) 20V 1.5A 3.1W Surface Mount PowerPAK® SC-75-6L Dual
20V 1.5A N-CH MOSFET, 180mR Rds On, Dual Channel, SM Product overview: SIB912DK-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 20V, 1.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 20V, 1.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIB912DK-T1-GE3 can be used for catalog matching and distributor lookup.
Win Source Part Number: 973023-SIB912DK-T1-G
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 216mOhm @ 1.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power - Max: 3.1W
Package / Case: PowerPAK® SC-75-6L Dual
Supplier Device Package: PowerPAK® SC-75-6L Dual
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIB912DKT1GE3,SIB912
Base Product Number: SIB912
MOSFET 2N-CH 20V 1.5A SC-75-6
MOSFET 20V Vds 8V Vgs PowerPAK SC-75
MOSFET 2N-CH 20V 1.5A SC75-6L
MOSFET, DUAL N CHANNEL, 20V, 1.5A, POWERPAK SC75-6; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:1.5A; On Resistance Rds(on):0.18ohm; Transistor Mounting:Surface Mount; No. of Pins:6Pins RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIB912DK-T1-GE3CT-ND | 278-SIB912DK-T1-GE3 | 973023-SIB912DK-T1-GE3 | SIB912DK-T1-GE3 | SIB912DK-T1-GE3 | SIB912DK-T1-GE3 | 69W7160 |
| Product Name | FET, MOSFET Arrays | Dual 20V 1.5A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual N Channel, 20V, 1.5A, Powerpak Sc75-6; Transistor Polarity Vishay |
| Package Type | PowerPAK® SC-75-6L Dual | SOT3 | PowerPAK® SC-75-6L Dual | TO-3 | |||
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | |||
| PD | 3100 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
