MOSFET P-CH 20V 9A PPAK SC75-6
P-CH MOSFET -20V, 6.8A, 35mR, PowerPAK SC-75 Product overview: SIB457EDK-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -20V, 6.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -20V, 6.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIB457EDK-T1-GE3
P-Channel 20V 9A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6
P-Channel 20V 9A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6
P-Channel 20V 9A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6
Win Source Part Number: 1277579-SIB457EDK-T1
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Package / Case: PowerPAK® SC-75-6
Supplier Device Package: PowerPAK® SC-75-6
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 56 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIB457EDK-T1-GE3,SIB
Base Product Number: SIB457
Drive Voltage (Max Rds On, Min Rds On): 4.5V
MOSFET P-CH 20V 9A PPAK SC75-6
MOSFET -20V Vds 8V Vgs PowerPAK SC-75
P CHANNEL MOSFET, -20V, 9A; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; No. of Pins:6Pins RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIB457EDK-T1-GE3 | 278-SIB457EDK-T1-GE3 | SIB457EDK-T1-GE3TR-ND | 1277579-SIB457EDK-T1-GE3 | SIB457EDK-T1-GE3 | SIB457EDK-T1-GE3 | 35R6187 |
| Product Name | Single FETs, MOSFETs | -20V 6.8A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | P Channel Mosfet, -20V, 9A; Channel Type Vishay |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | ||||||
| IDSS | 9000 milliamps | 9000 milliamps |
