MOSFET N-CH 100V 6.3A PPAK SC75
N-CH Power MOSFET 100V 6.3A PowerPAK SC-75 SMT Product overview: SIB456DK-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 6.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 6.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIB456DK-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 100V 6.3A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6
N-Channel 100V 6.3A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6
N-Channel 100V 6.3A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6
Win Source Part Number: 1277580-SIB456DK-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Package / Case: PowerPAK® SC-75-6
Supplier Device Package: PowerPAK® SC-75-6
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIB456DKT1GE3,SIB456
Base Product Number: SIB456
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 100V 6.3A PPAK SC75
VISHAY SIB456DK-T1-GE3 MOSFET Transistor, N Channel, 6.3 A, 100 V, 0.153 ohm, 10 V, 1.6 V
MOSFET 100V Vds 20V Vgs PowerPAK SC-75
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIB456DK-T1-GE3 | 278-SIB456DK-T1-GE3 | SIB456DK-T1-GE3TR-ND | 1277580-SIB456DK-T1-GE3 | SIB456DK-T1-GE3 | 880-SIB456DK-T1-GE3 | SIB456DK-T1-GE3 |
| Product Name | Single FETs, MOSFETs | 100V 6.3A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | VISHAY SIB456DK-T1-GE3 MOSFET Transistor, N Channel, 6.3 A, 100 V, 0.153 ohm, 10 V, 1.6 V | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | ||||
| IDSS | 6300 milliamps | ||||||
| PD | 2400 milliwatts | 2400 milliwatts | 2400 milliwatts |
