N-Ch PPAKSC75 190V 2.4 Ohm @ 4.5V
N-CH MOSFET 190V 1.5A 2.4R SC75-6 SM Product overview: SIB452DK-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 190V, 1.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 190V, 1.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIB452DK-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 190V 1.5A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6
N-Channel 190V 1.5A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6
N-Channel 190V 1.5A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6
Manufacturer: Vishay
Win Source Part Number: 028736-SIB452DK-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-75-6L Single
Dimension: PowerPAK SC-75-6L
Drain-Source Breakdown Voltage: 190V
Continuous Drain Current at 25°C: 1.5A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 6.5nC @ 10V
Max Input Capacitance: 135pF @ 50V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 2.4 Ohm @ 500mA, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
MOSFET N-CH 190V 1.5A PPAK SC75
MOSFET N-CH 190V 1.5A PPAK SC75
N CHANNEL MOSFET, 190V, 1.5A, SC-75; Channel Type:N Channel; Drain Source Voltage Vds:190V; Continuous Drain Current Id:1.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes
MOSFET 190V Vds 16V Vgs PowerPAK SC-75
| RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2567409P | 278-SIB452DK-T1-GE3 | SIB452DK-T1-GE3DKR-ND | 028736-SIB452DK-T1-GE3 | SIB452DK-T1-GE3 | SIB452DK-T1-GE3 | 16P3642 | SIB452DK-T1-GE3 |
| Product Name | MOSFETs | 190V 1.5A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIB452DK-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | N Channel Mosfet, 190V, 1.5A, Sc-75; Channel Type Vishay | MOSFET |
| Package Type | PowerPAK | PowerPAK® SC-75-6 | SOT3; PowerPAK SC-75-6L Single | Surface Mount | PowerPAK® SC-75-6 | TO-3 | ||
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 13000 milliwatts | 2400 to 13000 milliwatts | 2400 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |