Vishay Precision Group MOSFETs SIB452DK-T1-GE3

N-Ch PPAKSC75 190V 2.4 Ohm @ 4.5V

N-Ch PPAKSC75 190V 2.4 Ohm @ 4.5V

N-Ch PPAKSC75 190V 2.4 Ohm @ 4.5V

N-CH MOSFET 190V 1.5A 2.4R SC75-6 SM Product overview: SIB452DK-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 190V, 1.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 190V, 1.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIB452DK-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel 190V 1.5A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6

N-Channel 190V 1.5A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6

N-Channel 190V 1.5A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6

Manufacturer: Vishay
Win Source Part Number: 028736-SIB452DK-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-75-6L Single
Dimension: PowerPAK SC-75-6L
Drain-Source Breakdown Voltage: 190V
Continuous Drain Current at 25°C: 1.5A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 6.5nC @ 10V
Max Input Capacitance: 135pF @ 50V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 2.4 Ohm @ 500mA, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited