Manufacturer: Vishay
Win Source Part Number: 1096391-SIB422EDK-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 13W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-75-6L Single
Dimension: PowerPAK SC-75-6L
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 18nC @ 8V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 30 mOhm @ 5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFET N-CH 20V 9A SC-75-6 Product overview: SIB422EDK-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIB422EDK-T1-GE3
N-Channel 20V 9A (Tc) 2.5W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6
N-Channel 20V 9A (Tc) 2.5W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6
N-Channel 20V 9A (Tc) 2.5W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6
MOSFET 20V Vds 8V Vgs PowerPAK SC-75
MOSFET N-CH 20V 9A PPAK SC75-6
MOSFET, N-CH, 20V, 9A, POWERPAK SC75 ROHS COMPLIANT: YES
MOSFET N-CH 20V 9A PPAK SC75-6
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1096391-SIB422EDK-T1-GE3 | 278-SIB422EDK-T1-GE3 | SIB422EDK-T1-GE3CT-ND | SIB422EDK-T1-GE3 | SIB422EDK-T1-GE3 | 57AJ0376 | SIB422EDK-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIB422EDK-T1-GE3 | 20V 9A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 20V, 9A, Powerpak Sc75 Rohs Compliant Vishay | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 20 volts | 20 volts | |||||
| PD | 2500 to 13000 milliwatts | 13000 milliwatts | 2500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
