Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIB417DK-T1-GE3

Win Source Part Number: 1277552-SIB417DK-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 8 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 5.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Package / Case: PowerPAK® SC-75-6 Supplier Device Package: PowerPAK® SC-75-6 Gate Charge (Qg) (Max) @ Vgs: 12.75 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 4 V Vgs (Max): ±5V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 72 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIB417DK-T1-GE3TR,SI B417DK-T1-GE3DKR,SIB 417DK-T1-GE3CT,SIB41 7DKT1GE3 Base Product Number: SIB417 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V