Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIB411DK-T1-E3

Description
Win Source Part Number: 1277550-SIB411DK-T1- E3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 3.3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Package / Case: PowerPAK® SC-75-6 Supplier Device Package: PowerPAK® SC-75-6 Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V Vgs (Max): ±8V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 75 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIB411DK-T1-E3CT,SIB 411DK-T1-E3DKR,SIB41 1DK-T1-E3TR,SIB411DK T1E3 Base Product Number: SIB411 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
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Description
Win Source Part Number: 1277550-SIB411DK-T1- E3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 3.3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Package / Case: PowerPAK® SC-75-6 Supplier Device Package: PowerPAK® SC-75-6 Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V Vgs (Max): ±8V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 75 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIB411DK-T1-E3CT,SIB 411DK-T1-E3DKR,SIB41 1DK-T1-E3TR,SIB411DK T1E3 Base Product Number: SIB411 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277550-SIB411DK-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277550-SIB411DK-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277550-SIB411DK-T1-E3
Win Source Part Number: 1277550-SIB411DK-T1- E3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 3.3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Package / Case: PowerPAK® SC-75-6 Supplier Device Package: PowerPAK® SC-75-6 Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V Vgs (Max): ±8V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 75 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIB411DK-T1-E3CT,SIB 411DK-T1-E3DKR,SIB41 1DK-T1-E3TR,SIB411DK T1E3 Base Product Number: SIB411 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V

Win Source Part Number: 1277550-SIB411DK-T1-E3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Package / Case: PowerPAK® SC-75-6
Supplier Device Package: PowerPAK® SC-75-6
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 75 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIB411DK-T1-E3CT,SIB411DK-T1-E3DKR,SIB411DK-T1-E3TR,SIB411DKT1E3
Base Product Number: SIB411
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIB411DK-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIB411DK-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIB411DK-T1-E3
MOSFET P-CH 20V 9A PPAK SC75-6

MOSFET P-CH 20V 9A PPAK SC75-6

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors
Product Number 1277550-SIB411DK-T1-E3 SIB411DK-T1-E3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel
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