Vishay Intertechnology, Inc. Single FETs, MOSFETs SIB410DK-T1-GE3

N-Channel 30V 9A (Tc) 2.5W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6

Win Source Part Number: 1277562-SIB410DK-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 13W (Tc)
Package / Case: PowerPAK® SC-75-6
Supplier Device Package: PowerPAK® SC-75-6
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIB410DK-T1-GE3CT,SIB410DK-T1-GE3TR,SIB410DK-T1-GE3DKR
Base Product Number: SIB410
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V