Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIB408DK-T1-GE3

Description
Win Source Part Number: 1277561-SIB408DK-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Package / Case: PowerPAK® SC-75-6 Supplier Device Package: PowerPAK® SC-75-6 Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 78 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIB408DK-T1-GE3TR,SI B408DKT1GE3,SIB408DK -T1-GE3CT,SIB408DK-T 1-GE3DKR,SIB408DK-T1 -GE3 Base Product Number: SIB408 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Request a Quote
Description
Win Source Part Number: 1277561-SIB408DK-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Package / Case: PowerPAK® SC-75-6 Supplier Device Package: PowerPAK® SC-75-6 Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 78 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIB408DK-T1-GE3TR,SI B408DKT1GE3,SIB408DK -T1-GE3CT,SIB408DK-T 1-GE3DKR,SIB408DK-T1 -GE3 Base Product Number: SIB408 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The 1277561-SIB408DK-T1-GE3 is an N-Channel MOSFET with a maximum Drain-Source Voltage (Vds) of 30 V and a continuous Drain current rating of 7 A at 25 ¬8C. It features a low On-Resistance of 40 mOc at a gate-source voltage (Vgs) of 10 V and a current of 6 A. The device is housed in a compact PowerPAK SC-75-6 package, which is suitable for surface mount applications. It has a maximum power dissipation of 2.4 W at ambient temperature and 13 W at case temperature. The operating temperature range is from -55 ¬8C to 150 ¬8C. The MOSFET is compliant with RoHS and is halogen-free, making it suitable for environmentally conscious designs. It is tested for gate charge of up to 9.5 nC at 10 V and has an input capacitance of 350 pF at 15 V. This product is ideal for applications such as load switching in notebooks.

Datasheet Summary
Powered by GS/AI

The 1277561-SIB408DK-T1-GE3 is an N-Channel MOSFET with a maximum Drain-Source Voltage (Vds) of 30 V and a continuous Drain current rating of 7 A at 25 ¬8C. It features a low On-Resistance of 40 mOc at a gate-source voltage (Vgs) of 10 V and a current of 6 A. The device is housed in a compact PowerPAK SC-75-6 package, which is suitable for surface mount applications. It has a maximum power dissipation of 2.4 W at ambient temperature and 13 W at case temperature. The operating temperature range is from -55 ¬8C to 150 ¬8C. The MOSFET is compliant with RoHS and is halogen-free, making it suitable for environmentally conscious designs. It is tested for gate charge of up to 9.5 nC at 10 V and has an input capacitance of 350 pF at 15 V. This product is ideal for applications such as load switching in notebooks.

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277561-SIB408DK-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277561-SIB408DK-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277561-SIB408DK-T1-GE3
Win Source Part Number: 1277561-SIB408DK-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Package / Case: PowerPAK® SC-75-6 Supplier Device Package: PowerPAK® SC-75-6 Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 78 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIB408DK-T1-GE3TR,SI B408DKT1GE3,SIB408DK -T1-GE3CT,SIB408DK-T 1-GE3DKR,SIB408DK-T1 -GE3 Base Product Number: SIB408 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1277561-SIB408DK-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Package / Case: PowerPAK® SC-75-6
Supplier Device Package: PowerPAK® SC-75-6
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 78 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIB408DK-T1-GE3TR,SIB408DKT1GE3,SIB408DK-T1-GE3CT,SIB408DK-T1-GE3DKR,SIB408DK-T1-GE3
Base Product Number: SIB408
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - SIB408DK-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIB408DK-T1-GE3TR-ND
Single FETs, MOSFETs SIB408DK-T1-GE3TR-ND
N-Channel 30V 7A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6

N-Channel 30V 7A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIB408DK-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIB408DK-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIB408DK-T1-GE3
MOSFET N-CH 30V 7A PPAK SC75-6

MOSFET N-CH 30V 7A PPAK SC75-6

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors RF Transistors
Product Number 1277561-SIB408DK-T1-GE3 SIB408DK-T1-GE3TR-ND SIB408DK-T1-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Unlock Full Specs
to access all available technical data