P-CH JFET -12V -4.5A 41mR TrenchFET® Surface Mount Product overview: SIA975DJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, -12V, -4.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -12V, -4.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA975DJ-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET 2P-CH 12V 4.5A SC-70-6
Mosfet Array 2 P-Channel (Dual) 12V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual
Mosfet Array 2 P-Channel (Dual) 12V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual
Mosfet Array 2 P-Channel (Dual) 12V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual
Manufacturer: Vishay
Win Source Part Number: 028735-SIA975DJ-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: SiA975DJ
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Dual
Maximum Power Dissipation: 7.8W
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 4.5A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 26nC @ 8V
Max Input Capacitance: 1500pF @ 6V
Maximum Rds On at Id,Vgs: 41 mOhm @ 4.3A, 4.5V
Alternative Parts (Cross-Reference): AON2809; DMP1046UFDB -7; DMP1046UFDB -13;
Introduction Date: February 03, 2010
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management
DUAL MOSFET, P-CH/12V/4.5A/POWERP
MOSFET, DUAL P CHANNEL, -12V, -4.5A, POWERPAK SC70-6, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:4.5A; On Resistance Rds(on):0.07ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes
MOSFET 2P-CH 12V 4.5A SC70-6
MOSFET -12V Vds 8V Vgs PowerPAK SC-70
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIA975DJ-T1-GE3 | SIA975DJ-T1-GE3 | SIA975DJ-T1-GE3TR-ND | 028735-SIA975DJ-T1-GE3 | 97W2600 | 86R3791 | SIA975DJ-T1-GE3 | SIA975DJ-T1-GE3 |
| Product Name | SMD -12V -4.5A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA975DJ-T1-GE3 | Dual Mosfet, P-Ch/12V/4.5A/powerpak Sc70; Transistor Polarity Vishay | Mosfet, Dual P Channel, -12V, -4.5A, Powerpak Sc70-6, Full Reel; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel; 2 P-Channel (Dual) | P-Channel | P-Channel | ||||
| PD | 7800 milliwatts | 7800 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 12 volts | 12 volts |
