Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA975DJ-T1-GE3 SIA975DJ-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 028735-SIA975DJ-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Family Name: SiA975DJ Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SC-70-6 Dual Maximum Power Dissipation: 7.8W Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 4.5A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 26nC @ 8V Max Input Capacitance: 1500pF @ 6V Maximum Rds On at Id,Vgs: 41 mOhm @ 4.3A, 4.5V Alternative Parts (Cross-Reference): AON2809; DMP1046UFDB -7; DMP1046UFDB -13; Introduction Date: February 03, 2010 ECCN: EAR99 Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management
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Description
Manufacturer: Vishay Win Source Part Number: 028735-SIA975DJ-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Family Name: SiA975DJ Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SC-70-6 Dual Maximum Power Dissipation: 7.8W Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 4.5A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 26nC @ 8V Max Input Capacitance: 1500pF @ 6V Maximum Rds On at Id,Vgs: 41 mOhm @ 4.3A, 4.5V Alternative Parts (Cross-Reference): AON2809; DMP1046UFDB -7; DMP1046UFDB -13; Introduction Date: February 03, 2010 ECCN: EAR99 Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA975DJ-T1-GE3 - 028735-SIA975DJ-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA975DJ-T1-GE3
028735-SIA975DJ-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA975DJ-T1-GE3 028735-SIA975DJ-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028735-SIA975DJ-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Family Name: SiA975DJ Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SC-70-6 Dual Maximum Power Dissipation: 7.8W Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 4.5A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 26nC @ 8V Max Input Capacitance: 1500pF @ 6V Maximum Rds On at Id,Vgs: 41 mOhm @ 4.3A, 4.5V Alternative Parts (Cross-Reference): AON2809; DMP1046UFDB -7; DMP1046UFDB -13; Introduction Date: February 03, 2010 ECCN: EAR99 Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 028735-SIA975DJ-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: SiA975DJ
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Dual
Maximum Power Dissipation: 7.8W
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 4.5A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 26nC @ 8V
Max Input Capacitance: 1500pF @ 6V
Maximum Rds On at Id,Vgs: 41 mOhm @ 4.3A, 4.5V
Alternative Parts (Cross-Reference): AON2809; DMP1046UFDB -7; DMP1046UFDB -13;
Introduction Date: February 03, 2010
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
FET, MOSFET Arrays - SIA975DJ-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SIA975DJ-T1-GE3TR-ND
FET, MOSFET Arrays SIA975DJ-T1-GE3TR-ND
Mosfet Array 2 P-Channel (Dual) 12V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Mosfet Array 2 P-Channel (Dual) 12V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Buy Now Datasheet
FET, MOSFET Arrays - SIA975DJ-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SIA975DJ-T1-GE3DKR-ND
FET, MOSFET Arrays SIA975DJ-T1-GE3DKR-ND
Mosfet Array 2 P-Channel (Dual) 12V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Mosfet Array 2 P-Channel (Dual) 12V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Buy Now Datasheet
FET, MOSFET Arrays - SIA975DJ-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SIA975DJ-T1-GE3CT-ND
FET, MOSFET Arrays SIA975DJ-T1-GE3CT-ND
Mosfet Array 2 P-Channel (Dual) 12V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Mosfet Array 2 P-Channel (Dual) 12V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Buy Now Datasheet
FET, MOSFET Arrays - SIA975DJ-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SIA975DJ-T1-GE3
FET, MOSFET Arrays SIA975DJ-T1-GE3
MOSFET 2P-CH 12V 4.5A SC-70-6

MOSFET 2P-CH 12V 4.5A SC-70-6

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET -12V Vds 8V Vgs PowerPAK SC-70

MOSFET -12V Vds 8V Vgs PowerPAK SC-70

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIA975DJ-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIA975DJ-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIA975DJ-T1-GE3
MOSFET 2P-CH 12V 4.5A SC70-6

MOSFET 2P-CH 12V 4.5A SC70-6

Supplier's Site
Dual Mosfet, P-Ch/12V/4.5A/powerpak Sc70; Transistor Polarity Vishay - 97W2600 - Newark, An Avnet Company
Chicago, IL, United States
Dual Mosfet, P-Ch/12V/4.5A/powerpak Sc70; Transistor Polarity Vishay
97W2600
Dual Mosfet, P-Ch/12V/4.5A/powerpak Sc70; Transistor Polarity Vishay 97W2600
DUAL MOSFET, P-CH/12V/4.5A/POWERP AK SC70; Transistor Polarity:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:4.5A; On Resistance Rds(on):0.033ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

DUAL MOSFET, P-CH/12V/4.5A/POWERPAK SC70; Transistor Polarity:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:4.5A; On Resistance Rds(on):0.033ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, Dual P Channel, -12V, -4.5A, Powerpak Sc70-6, Full Reel; Transistor Polarity Vishay - 86R3791 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual P Channel, -12V, -4.5A, Powerpak Sc70-6, Full Reel; Transistor Polarity Vishay
86R3791
Mosfet, Dual P Channel, -12V, -4.5A, Powerpak Sc70-6, Full Reel; Transistor Polarity Vishay 86R3791
MOSFET, DUAL P CHANNEL, -12V, -4.5A, POWERPAK SC70-6, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:4.5A; On Resistance Rds(on):0.07ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

MOSFET, DUAL P CHANNEL, -12V, -4.5A, POWERPAK SC70-6, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:4.5A; On Resistance Rds(on):0.07ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 028735-SIA975DJ-T1-GE3 SIA975DJ-T1-GE3TR-ND SIA975DJ-T1-GE3 SIA975DJ-T1-GE3 SIA975DJ-T1-GE3 97W2600 86R3791
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA975DJ-T1-GE3 FET, MOSFET Arrays FET, MOSFET Arrays MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Dual Mosfet, P-Ch/12V/4.5A/powerpak Sc70; Transistor Polarity Vishay Mosfet, Dual P Channel, -12V, -4.5A, Powerpak Sc70-6, Full Reel; Transistor Polarity Vishay
Polarity P-Channel P-Channel; 2 P-Channel (Dual) P-Channel
V(BR)DSS 12 volts 12 volts
PD 7800 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; PowerPAK SC-70-6 Dual PowerPAK® SC-70-6 Dual PowerPAK® SC-70-6 Dual TO-3 TO-3
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