Manufacturer: Vishay
Win Source Part Number: 1096389-SIA929DJ-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Dual
Maximum Power Dissipation: 7.8W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.5A (Tc)
Gate-Source Threshold Voltage: 1.1V @ 250μA
Max Gate Charge: 21nC @ 10V
Max Input Capacitance: 575pF @ 15V
Maximum Rds On at Id,Vgs: 64 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
Mosfet Array 2 P-Channel (Dual) 30V 4.5A (Tc) 7.8W Surface Mount PowerPAK® SC-70-6 Dual
Mosfet Array 2 P-Channel (Dual) 30V 4.5A (Tc) 7.8W Surface Mount PowerPAK® SC-70-6 Dual
Mosfet Array 2 P-Channel (Dual) 30V 4.5A (Tc) 7.8W Surface Mount PowerPAK® SC-70-6 Dual
MOSFET -30V 64mOhm@10V 4.5A P-Ch G-III Product overview: SIA929DJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -30V, 64mOhm, 10V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, 64mOhm, 10V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA929DJ-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET -30V Vds 12V Vgs PowerPAK SC-70
MOSFET 2P-CH 30V 4.5A SC70-6
DUAL MOSFET,P-CH, 30V/4.5A/POWERPAK SC70 ROHS COMPLIANT: YES
MOSFET 2P-CH 30V 4.5A SC70-6
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1096389-SIA929DJ-T1-GE3 | SIA929DJ-T1-GE3TR-ND | 278-SIA929DJ-T1-GE3 | SIA929DJ-T1-GE3 | SIA929DJ-T1-GE3 | 57AJ0375 | SIA929DJ-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA929DJ-T1-GE3 | FET, MOSFET Arrays | -30V 64mOhm 10V MOSFET Transistor | MOSFET | FET, MOSFET Arrays | Dual Mosfet,p-Ch, 30V/4.5A/powerpak Sc70 Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; 2 P-Channel (Dual) | ||||
| V(BR)DSS | 30 volts | 30 volts | |||||
| PD | 7800 milliwatts | 7800 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
