Vishay Intertechnology, Inc. FET, MOSFET Arrays SIA922EDJ-T1-GE3

Description
MOSFET 2N-CH 30V 4.5A SC70-6
Request a Quote Datasheet
Description
MOSFET 2N-CH 30V 4.5A SC70-6
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SIA922EDJ-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SIA922EDJ-T1-GE3
FET, MOSFET Arrays SIA922EDJ-T1-GE3
MOSFET 2N-CH 30V 4.5A SC70-6

MOSFET 2N-CH 30V 4.5A SC70-6

Supplier's Site Datasheet
FET, MOSFET Arrays - SIA922EDJ-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SIA922EDJ-T1-GE3TR-ND
FET, MOSFET Arrays SIA922EDJ-T1-GE3TR-ND
Mosfet Array 2 N-Channel (Dual) 30V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Mosfet Array 2 N-Channel (Dual) 30V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA922EDJ-T1-GE3 - 1096387-SIA922EDJ-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA922EDJ-T1-GE3
1096387-SIA922EDJ-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA922EDJ-T1-GE3 1096387-SIA922EDJ-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1096387-SIA922EDJ-T1 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SC-70-6 Dual Maximum Power Dissipation: 7.8W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4.5A Gate-Source Threshold Voltage: 1.4V @ 250μA Max Gate Charge: 12nC @ 10V Maximum Rds On at Id,Vgs: 64 mOhm @ 3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1096387-SIA922EDJ-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Dual
Maximum Power Dissipation: 7.8W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.5A
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 12nC @ 10V
Maximum Rds On at Id,Vgs: 64 mOhm @ 3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIA922EDJ-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIA922EDJ-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIA922EDJ-T1-GE3
MOSFET 2N-CH 30V 4.5A SC70-6

MOSFET 2N-CH 30V 4.5A SC70-6

Supplier's Site
MOSFET 2N-CH 30V 4.5A SC70-6 - 880-SIA922EDJ-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
MOSFET 2N-CH 30V 4.5A SC70-6
880-SIA922EDJ-T1-GE3
MOSFET 2N-CH 30V 4.5A SC70-6 880-SIA922EDJ-T1-GE3
MOSFET 2N-CH 30V 4.5A SC70-6

MOSFET 2N-CH 30V 4.5A SC70-6

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SIA922EDJ-T1-GE3 SIA922EDJ-T1-GE3TR-ND 1096387-SIA922EDJ-T1-GE3 SIA922EDJ-T1-GE3 880-SIA922EDJ-T1-GE3
Product Name FET, MOSFET Arrays FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA922EDJ-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET 2N-CH 30V 4.5A SC70-6
Polarity N-Channel; 2 N-Channel (Dual) N-Channel
Transistor Technology / Material MOSFET (Metal Oxide) SILICON
V(BR)DSS 30 volts 30 volts 30 volts
IDSS 4500 milliamps
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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