Vishay Precision Group FET, MOSFET Arrays SIA921EDJ-T1-GE3

Description
Mosfet Array 2 P-Channel (Dual) 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual
Request a Quote Datasheet
Description
Mosfet Array 2 P-Channel (Dual) 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SIA921EDJ-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SIA921EDJ-T1-GE3CT-ND
FET, MOSFET Arrays SIA921EDJ-T1-GE3CT-ND
Mosfet Array 2 P-Channel (Dual) 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Mosfet Array 2 P-Channel (Dual) 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Buy Now Datasheet
FET, MOSFET Arrays - SIA921EDJ-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SIA921EDJ-T1-GE3DKR-ND
FET, MOSFET Arrays SIA921EDJ-T1-GE3DKR-ND
Mosfet Array 2 P-Channel (Dual) 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Mosfet Array 2 P-Channel (Dual) 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Buy Now Datasheet
FET, MOSFET Arrays - SIA921EDJ-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SIA921EDJ-T1-GE3TR-ND
FET, MOSFET Arrays SIA921EDJ-T1-GE3TR-ND
Mosfet Array 2 P-Channel (Dual) 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Mosfet Array 2 P-Channel (Dual) 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Buy Now Datasheet
Singapore
Dual 20V 4.5A MOSFET Transistor
278-SIA921EDJ-T1-GE3
Dual 20V 4.5A MOSFET Transistor 278-SIA921EDJ-T1-GE3
Dual P-Ch MOSFET 20V 4.5A 59mR SC70-6 Product overview: SIA921EDJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 20V, 4.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 20V, 4.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA921EDJ-T1-GE3 can be used for catalog matching and distributor lookup.

Dual P-Ch MOSFET 20V 4.5A 59mR SC70-6 Product overview: SIA921EDJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 20V, 4.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 20V, 4.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA921EDJ-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - SIA921EDJ-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SIA921EDJ-T1-GE3
FET, MOSFET Arrays SIA921EDJ-T1-GE3
MOSFET 2P-CH 20V 4.5A SC70-6

MOSFET 2P-CH 20V 4.5A SC70-6

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA921EDJ-T1-GE3 - 028734-SIA921EDJ-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA921EDJ-T1-GE3
028734-SIA921EDJ-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA921EDJ-T1-GE3 028734-SIA921EDJ-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028734-SIA921EDJ-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Family Name: SiA921EDJ Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SC-70-6 Dual Maximum Power Dissipation: 7.8W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.5A Gate-Source Threshold Voltage: 1.4V @ 250μA Max Gate Charge: 23nC @ 10V Maximum Rds On at Id,Vgs: 59 mOhm @ 3.6A, 4.5V Alternative Parts (Cross-Reference): DMP2160UFDB-7; DMP2160UFDB; DMP2160UFDBQ-7 ; SSM6P49NU,LF; Introduction Date: March 09, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 028734-SIA921EDJ-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: SiA921EDJ
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Dual
Maximum Power Dissipation: 7.8W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.5A
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 23nC @ 10V
Maximum Rds On at Id,Vgs: 59 mOhm @ 3.6A, 4.5V
Alternative Parts (Cross-Reference): DMP2160UFDB-7; DMP2160UFDB; DMP2160UFDBQ-7 ; SSM6P49NU,LF;
Introduction Date: March 09, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
MOSFET -20V Vds 12V Vgs PowerPAK SC-70

MOSFET -20V Vds 12V Vgs PowerPAK SC-70

Buy Now Datasheet
Mosfet Transistor Array; Transistor Polarity Vishay - 63R6002 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor Array; Transistor Polarity Vishay
63R6002
Mosfet Transistor Array; Transistor Polarity Vishay 63R6002
MOSFET Transistor Array; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.5A; On Resistance Rds(on):0.059ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; No. of Pins:6Pins RoHS Compliant: Yes

MOSFET Transistor Array; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.5A; On Resistance Rds(on):0.059ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; No. of Pins:6Pins RoHS Compliant: Yes

Supplier's Site
Mosfet Transistor Array, Full Reel; Transistor Polarity Vishay - 15R4844 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor Array, Full Reel; Transistor Polarity Vishay
15R4844
Mosfet Transistor Array, Full Reel; Transistor Polarity Vishay 15R4844
MOSFET Transistor Array, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.5A; On Resistance Rds(on):0.059ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

MOSFET Transistor Array, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.5A; On Resistance Rds(on):0.059ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

Supplier's Site
Mosfet, Dual/p-Ch/20V/4.5A/powerpak Sc70 Rohs Compliant Vishay - 57AJ0373 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual/p-Ch/20V/4.5A/powerpak Sc70 Rohs Compliant Vishay
57AJ0373
Mosfet, Dual/p-Ch/20V/4.5A/powerpak Sc70 Rohs Compliant Vishay 57AJ0373
MOSFET, DUAL/P-CH/20V/4.5A/P OWERPAK SC70 ROHS COMPLIANT: YES

MOSFET, DUAL/P-CH/20V/4.5A/POWERPAK SC70 ROHS COMPLIANT: YES

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIA921EDJ-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIA921EDJ-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIA921EDJ-T1-GE3
MOSFET 2P-CH 20V 4.5A SC70-6

MOSFET 2P-CH 20V 4.5A SC70-6

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SIA921EDJ-T1-GE3CT-ND 278-SIA921EDJ-T1-GE3 SIA921EDJ-T1-GE3 028734-SIA921EDJ-T1-GE3 SIA921EDJ-T1-GE3 63R6002 57AJ0373 SIA921EDJ-T1-GE3
Product Name FET, MOSFET Arrays Dual 20V 4.5A MOSFET Transistor FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA921EDJ-T1-GE3 MOSFET Mosfet Transistor Array; Transistor Polarity Vishay Mosfet, Dual/p-Ch/20V/4.5A/powerpak Sc70 Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type PowerPAK® SC-70-6 Dual PowerPAK® SC-70-6 Dual SOT3; PowerPAK SC-70-6 Dual TO-3 TO-3
Polarity P-Channel P-Channel; 2 P-Channel (Dual) P-Channel
PD 7800 milliwatts 7800 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Transistor Technology / Material MOSFET (Metal Oxide)
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