Manufacturer: Vishay
Win Source Part Number: 028733-SIA913ADJ-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: SiA913ADJ
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Dual
Maximum Power Dissipation: 6.5W
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 4.5A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 20nC @ 8V
Max Input Capacitance: 590pF @ 6V
Maximum Rds On at Id,Vgs: 61 mOhm @ 3.6A, 4.5V
Alternative Parts (Cross-Reference): uPA2672T1R-E2-AX;
Introduction Date: February 13, 2009
ECCN: EAR99
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Sufficient
Dual P-CH MOSFET Array, 12V, 4.3A, 50mR, 6-Pin PowerPAK SC-70 Product overview: SIA913ADJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 12V, 4.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 12V, 4.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA913ADJ-T1-GE3
Mosfet Array 2 P-Channel (Dual) 12V 4.5A 6.5W Surface Mount PowerPAK® SC-70-6 Dual
Mosfet Array 2 P-Channel (Dual) 12V 4.5A 6.5W Surface Mount PowerPAK® SC-70-6 Dual
Mosfet Array 2 P-Channel (Dual) 12V 4.5A 6.5W Surface Mount PowerPAK® SC-70-6 Dual
MOSFET 2P-CH 12V 4.5A SC70-6
MOSFET 12V 4.5A 6.5W 61mohm @ 4.5V
MOSFET 2P-CH 12V 4.5A SC70-6
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 028733-SIA913ADJ-T1-GE3 | 278-SIA913ADJ-T1-GE3 | SIA913ADJ-T1-GE3TR-ND | SIA913ADJ-T1-GE3 | SIA913ADJ-T1-GE3 | SIA913ADJ-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA913ADJ-T1-GE3 | Dual 12V 4.3A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; 2 P-Channel (Dual) | |||
| V(BR)DSS | 12 volts | 12 volts | ||||
| PD | 6500 milliwatts | 6500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
