Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA911EDJ-T1-GE3 SIA911EDJ-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 119264-SIA911EDJ-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Dual
Maximum Power Dissipation: 7.8W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.5A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 11nC @ 8V
Maximum Rds On at Id,Vgs: 101 mOhm @ 2.7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Mosfet Array 2 P-Channel (Dual) 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

MOSFET 2P-CH 20V 4.5A SC70-6 Product overview: SIA911EDJ-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SIA911EDJ-T1-GE3 can be used for catalog matching and distributor lookup.