Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA911ADJ-T1-GE3 SIA911ADJ-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 064630-SIA911ADJ-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SC-70-6 Dual Maximum Power Dissipation: 6.5W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.5A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 13nC @ 8V Max Input Capacitance: 345pF @ 10V Maximum Rds On at Id,Vgs: 116 mOhm @ 2.8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 064630-SIA911ADJ-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SC-70-6 Dual Maximum Power Dissipation: 6.5W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.5A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 13nC @ 8V Max Input Capacitance: 345pF @ 10V Maximum Rds On at Id,Vgs: 116 mOhm @ 2.8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA911ADJ-T1-GE3 - 064630-SIA911ADJ-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA911ADJ-T1-GE3
064630-SIA911ADJ-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA911ADJ-T1-GE3 064630-SIA911ADJ-T1-GE3
Manufacturer: Vishay Win Source Part Number: 064630-SIA911ADJ-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SC-70-6 Dual Maximum Power Dissipation: 6.5W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.5A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 13nC @ 8V Max Input Capacitance: 345pF @ 10V Maximum Rds On at Id,Vgs: 116 mOhm @ 2.8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 064630-SIA911ADJ-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Dual
Maximum Power Dissipation: 6.5W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.5A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 13nC @ 8V
Max Input Capacitance: 345pF @ 10V
Maximum Rds On at Id,Vgs: 116 mOhm @ 2.8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
P-Channel Dual 20V 4.5A MOSFET Transistor
278-SIA911ADJ-T1-GE3
P-Channel Dual 20V 4.5A MOSFET Transistor 278-SIA911ADJ-T1-GE3
Dual P-Channel MOSFET 20V 4.5A 165mR 6-Pin PowerPAK SC-70 Product overview: SIA911ADJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, 20V, 4.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 20V, 4.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA911ADJ-T1-GE3 can be used for catalog matching and distributor lookup.

Dual P-Channel MOSFET 20V 4.5A 165mR 6-Pin PowerPAK SC-70 Product overview: SIA911ADJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, 20V, 4.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 20V, 4.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA911ADJ-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - 742-SIA911ADJ-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
742-SIA911ADJ-T1-GE3TR-ND
FET, MOSFET Arrays 742-SIA911ADJ-T1-GE3TR-ND
Mosfet Array 2 P-Channel (Dual) 20V 4.5A 6.5W Surface Mount PowerPAK® SC-70-6 Dual

Mosfet Array 2 P-Channel (Dual) 20V 4.5A 6.5W Surface Mount PowerPAK® SC-70-6 Dual

Buy Now Datasheet
FET, MOSFET Arrays - 742-SIA911ADJ-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
742-SIA911ADJ-T1-GE3CT-ND
FET, MOSFET Arrays 742-SIA911ADJ-T1-GE3CT-ND
MOSFET 2P-CH 20V 4.5A PPAK8X8

MOSFET 2P-CH 20V 4.5A PPAK8X8

Buy Now Datasheet
FET, MOSFET Arrays - 742-SIA911ADJ-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
742-SIA911ADJ-T1-GE3DKR-ND
FET, MOSFET Arrays 742-SIA911ADJ-T1-GE3DKR-ND
MOSFET 2P-CH 20V 4.5A PPAK8X8

MOSFET 2P-CH 20V 4.5A PPAK8X8

Buy Now Datasheet
MOSFET 2P-CH 20V 4.5A SC70-6 - 880-SIA911ADJ-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
MOSFET 2P-CH 20V 4.5A SC70-6
880-SIA911ADJ-T1-GE3
MOSFET 2P-CH 20V 4.5A SC70-6 880-SIA911ADJ-T1-GE3
MOSFET 2P-CH 20V 4.5A SC70-6

MOSFET 2P-CH 20V 4.5A SC70-6

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIA911ADJ-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIA911ADJ-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIA911ADJ-T1-GE3
MOSFET 2P-CH 20V 4.5A SC70-6

MOSFET 2P-CH 20V 4.5A SC70-6

Supplier's Site
MOSFET 20V 4.5A 6.5W

MOSFET 20V 4.5A 6.5W

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 064630-SIA911ADJ-T1-GE3 278-SIA911ADJ-T1-GE3 742-SIA911ADJ-T1-GE3TR-ND 880-SIA911ADJ-T1-GE3 SIA911ADJ-T1-GE3 SIA911ADJ-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA911ADJ-T1-GE3 P-Channel Dual 20V 4.5A MOSFET Transistor FET, MOSFET Arrays MOSFET 2P-CH 20V 4.5A SC70-6 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel
V(BR)DSS 20 volts -20 volts
PD 6500 milliwatts 6500 milliwatts 1800 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; PowerPAK SC-70-6 Dual PowerPAK® SC-70-6 Dual
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