Vishay Intertechnology, Inc. P-Channel Dual 20 V 0.057 Ohm MOSFET Transistor SIA907EDJT-T1-GE3

SiA907EDJT Series Dual P Channel 20 V 0.057 Ohm 7.8 W Mosfet - PowerPAK SC-70-6L Product overview: SIA907EDJT-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, 20 V, 0.057 Ohm, 7.8 W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 20 V, 0.057 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA907EDJT-T1-GE3 can be used for catalog matching and distributor lookup.

Mosfet Array 2 P-Channel (Dual) 20V 4.5A (Tc) 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Mosfet Array 2 P-Channel (Dual) 20V 4.5A (Tc) 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Mosfet Array 2 P-Channel (Dual) 20V 4.5A (Tc) 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Manufacturer: Vishay
Win Source Part Number: 1096385-SIA907EDJT-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Dual
Maximum Power Dissipation: 7.8W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.5A (Tc)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 23nC @ 10V
Maximum Rds On at Id,Vgs: 57 mOhm @ 3.6A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance