Vishay Intertechnology, Inc. Single FETs, MOSFETs SIA814DJ-T1-GE3

N-Channel 30V 4.5A (Tc) 1.9W (Ta), 6.5W (Tc) Surface Mount PowerPAK® SC-70-6 Dual

MOSFET N-CH 30V 4.5A PPAK SC70-6 Product overview: SIA814DJ-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA814DJ-T1-GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 1096383-SIA814DJ-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: N-Channel
Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Dual
Dimension: PowerPAK SC-70-6 Dual
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.5A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 340pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 61 mOhm @ 3.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance