Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA813DJ-T1-GE3 SIA813DJ-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 106527-SIA813DJ-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Dual
Dimension: PowerPAK SC-70-6 Dual
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.5A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 13nC @ 8V
Max Input Capacitance: 355pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 94 mOhm @ 2.8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

MOSFET P-CH 20V 4.5A PPAK SC70-6 Product overview: SIA813DJ-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA813DJ-T1-GE3 can be used for catalog matching and distributor lookup.