MOSFET N/P-CH 12V/20V SC-70-6L
Win Source Part Number: 970250-SIA537EDJ-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power - Max: 7.8W
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIA537EDJ-T1-GE3TR,S
Base Product Number: SIA537
Mosfet Array N and P-Channel 12V, 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual
Mosfet Array N and P-Channel 12V, 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual
Mosfet Array N and P-Channel 12V, 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual
Small Signal Field-Effect Transistor, Product overview: SIA537EDJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA537EDJ-T1-GE3
MOSFET, N&P CHANNEL, 12V, 4.5A, POWERPAK SC70; Transistor Polarity:Complementa
MOSFET, N&P CHANNEL, 12V, 4.5A, POWERPAK SC70; Transistor Polarity:Complementa
MOSFET, DUAL/COMP/12V/4.5A/P
MOSFET N/P-CH 12V 4.5A SC70-6
MOSFET -20V Vds 8V Vgs PowerPAK SC-70
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIA537EDJ-T1-GE3 | 970250-SIA537EDJ-T1-GE3 | SIA537EDJ-T1-GE3TR-ND | 278-SIA537EDJ-T1-GE3 | 38X4912 | 57AJ0371 | SIA537EDJ-T1-GE3 | SIA537EDJ-T1-GE3 |
| Product Name | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | FET, MOSFET Arrays | MOSFET Transistor | Mosfet, N&p Channel, 12V, 4.5A, Powerpak Sc70; Transistor Polarity Vishay | Mosfet, Dual/comp/12V/4.5A/powerpak Sc70 Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; N and P-Channel | P-Channel | N-Channel; P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 12 to 20 volts | |||||||
| IDSS | 4500 milliamps | 4500 milliamps | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
