Vishay Precision Group FET, MOSFET Arrays SIA519EDJ-T1-GE3

Description
MOSFET N/P-CH 20V 4.5A SC70-6
Request a Quote Datasheet
Description
MOSFET N/P-CH 20V 4.5A SC70-6
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SIA519EDJ-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SIA519EDJ-T1-GE3
FET, MOSFET Arrays SIA519EDJ-T1-GE3
MOSFET N/P-CH 20V 4.5A SC70-6

MOSFET N/P-CH 20V 4.5A SC70-6

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA519EDJ-T1-GE3 - 1096381-SIA519EDJ-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA519EDJ-T1-GE3
1096381-SIA519EDJ-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA519EDJ-T1-GE3 1096381-SIA519EDJ-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1096381-SIA519EDJ-T1 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SC-70-6 Dual Maximum Power Dissipation: 7.8W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.5A Gate-Source Threshold Voltage: 1.4V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 350pF @ 10V Maximum Rds On at Id,Vgs: 40 mOhm @ 4.2A, 4.5V Alternative Parts (Cross-Reference): DMC2038LVT-7; AP2535GEY-HF; SiA519EDJ; Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 1096381-SIA519EDJ-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Dual
Maximum Power Dissipation: 7.8W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.5A
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 350pF @ 10V
Maximum Rds On at Id,Vgs: 40 mOhm @ 4.2A, 4.5V
Alternative Parts (Cross-Reference): DMC2038LVT-7; AP2535GEY-HF; SiA519EDJ;
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
FET, MOSFET Arrays - SIA519EDJ-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SIA519EDJ-T1-GE3TR-ND
FET, MOSFET Arrays SIA519EDJ-T1-GE3TR-ND
Mosfet Array N and P-Channel 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Mosfet Array N and P-Channel 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Buy Now Datasheet
FET, MOSFET Arrays - SIA519EDJ-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SIA519EDJ-T1-GE3CT-ND
FET, MOSFET Arrays SIA519EDJ-T1-GE3CT-ND
Mosfet Array N and P-Channel 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Mosfet Array N and P-Channel 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Buy Now Datasheet
FET, MOSFET Arrays - SIA519EDJ-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SIA519EDJ-T1-GE3DKR-ND
FET, MOSFET Arrays SIA519EDJ-T1-GE3DKR-ND
Mosfet Array N and P-Channel 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Mosfet Array N and P-Channel 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Buy Now Datasheet
Singapore
20V 4.5A MOSFET Transistor
278-SIA519EDJ-T1-GE3
20V 4.5A MOSFET Transistor 278-SIA519EDJ-T1-GE3
Trans MOSFET N/P-CH 20V 4.5A 6-Pin PowerPAK SC-70 EP T/R Product overview: SIA519EDJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA519EDJ-T1-GE3 can be used for catalog matching and distributor lookup.

Trans MOSFET N/P-CH 20V 4.5A 6-Pin PowerPAK SC-70 EP T/R Product overview: SIA519EDJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA519EDJ-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIA519EDJ-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIA519EDJ-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIA519EDJ-T1-GE3
MOSFET N/P-CH 20V 4.5A SC70-6

MOSFET N/P-CH 20V 4.5A SC70-6

Supplier's Site
MOSFET -20V Vds 12V Vgs PowerPAK SC-70

MOSFET -20V Vds 12V Vgs PowerPAK SC-70

Buy Now Datasheet
Dual Mosfet, N And P Channel, 4.5 A, 20 V, 0.053 Ohm, 4.5 V, 600 Mv Rohs Compliant Vishay - 97W2598 - Newark, An Avnet Company
Chicago, IL, United States
Dual Mosfet, N And P Channel, 4.5 A, 20 V, 0.053 Ohm, 4.5 V, 600 Mv Rohs Compliant Vishay
97W2598
Dual Mosfet, N And P Channel, 4.5 A, 20 V, 0.053 Ohm, 4.5 V, 600 Mv Rohs Compliant Vishay 97W2598
Dual MOSFET, N and P Channel, 4.5 A, 20 V, 0.053 ohm, 4.5 V, 600 mV RoHS Compliant: Yes

Dual MOSFET, N and P Channel, 4.5 A, 20 V, 0.053 ohm, 4.5 V, 600 mV RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N & P Channel, 20V, 4.5A, Powerpak Sc70-6; Transistor Polarity Vishay - 69W7157 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N & P Channel, 20V, 4.5A, Powerpak Sc70-6; Transistor Polarity Vishay
69W7157
Mosfet, N & P Channel, 20V, 4.5A, Powerpak Sc70-6; Transistor Polarity Vishay 69W7157
MOSFET, N & P CHANNEL, 20V, 4.5A, POWERPAK SC70-6; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.5A; On Resistance Rds(on):0.053ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

MOSFET, N & P CHANNEL, 20V, 4.5A, POWERPAK SC70-6; Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.5A; On Resistance Rds(on):0.053ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

Supplier's Site
Mosfet, N & P Ch, 20V, 4.5A, Powerpak Sc70-6, Full Reel; Transistor Polarity Vishay - 86R3785 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N & P Ch, 20V, 4.5A, Powerpak Sc70-6, Full Reel; Transistor Polarity Vishay
86R3785
Mosfet, N & P Ch, 20V, 4.5A, Powerpak Sc70-6, Full Reel; Transistor Polarity Vishay 86R3785
MOSFET, N & P CH, 20V, 4.5A, POWERPAK SC70-6, FULL REEL; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.5A; On Resistance Rds(on):0.053ohm; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

MOSFET, N & P CH, 20V, 4.5A, POWERPAK SC70-6, FULL REEL; Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.5A; On Resistance Rds(on):0.053ohm; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SIA519EDJ-T1-GE3 1096381-SIA519EDJ-T1-GE3 SIA519EDJ-T1-GE3TR-ND 278-SIA519EDJ-T1-GE3 SIA519EDJ-T1-GE3 SIA519EDJ-T1-GE3 97W2598 69W7157 86R3785
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA519EDJ-T1-GE3 FET, MOSFET Arrays 20V 4.5A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Dual Mosfet, N And P Channel, 4.5 A, 20 V, 0.053 Ohm, 4.5 V, 600 Mv Rohs Compliant Vishay Mosfet, N & P Channel, 20V, 4.5A, Powerpak Sc70-6; Transistor Polarity Vishay Mosfet, N & P Ch, 20V, 4.5A, Powerpak Sc70-6, Full Reel; Transistor Polarity Vishay
Polarity P-Channel; N and P-Channel P-Channel N-Channel; P-Channel P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts 20 volts
IDSS 4500 milliamps 4500 milliamps 4500 milliamps
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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