Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIA469DJ-T1-GE3

Description
Win Source Part Number: 1277674-SIA469DJ-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen III Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 15.6W (Tc) Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 71 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIA469DJ-T1-GE3CT,SI A469DJ-T1-GE3TR,SIA4 69DJ-T1-GE3DKR Base Product Number: SIA469 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Description
Win Source Part Number: 1277674-SIA469DJ-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen III Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 15.6W (Tc) Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 71 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIA469DJ-T1-GE3CT,SI A469DJ-T1-GE3TR,SIA4 69DJ-T1-GE3DKR Base Product Number: SIA469 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277674-SIA469DJ-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277674-SIA469DJ-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277674-SIA469DJ-T1-GE3
Win Source Part Number: 1277674-SIA469DJ-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen III Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 15.6W (Tc) Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 71 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIA469DJ-T1-GE3CT,SI A469DJ-T1-GE3TR,SIA4 69DJ-T1-GE3DKR Base Product Number: SIA469 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1277674-SIA469DJ-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET® Gen III
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 15.6W (Tc)
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 71 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIA469DJ-T1-GE3CT,SIA469DJ-T1-GE3TR,SIA469DJ-T1-GE3DKR
Base Product Number: SIA469
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - SIA469DJ-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIA469DJ-T1-GE3DKR-ND
Single FETs, MOSFETs SIA469DJ-T1-GE3DKR-ND
P-Channel 30V 12A (Tc) 15.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single

P-Channel 30V 12A (Tc) 15.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single

Buy Now Datasheet
Single FETs, MOSFETs - SIA469DJ-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIA469DJ-T1-GE3CT-ND
Single FETs, MOSFETs SIA469DJ-T1-GE3CT-ND
P-Channel 30V 12A (Tc) 15.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single

P-Channel 30V 12A (Tc) 15.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single

Buy Now Datasheet
Single FETs, MOSFETs - SIA469DJ-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIA469DJ-T1-GE3TR-ND
Single FETs, MOSFETs SIA469DJ-T1-GE3TR-ND
P-Channel 30V 12A (Tc) 15.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single

P-Channel 30V 12A (Tc) 15.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single

Buy Now Datasheet
Single FETs, MOSFETs - SIA469DJ-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIA469DJ-T1-GE3
Single FETs, MOSFETs SIA469DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6

MOSFET P-CH 30V 12A PPAK SC70-6

Supplier's Site Datasheet
Singapore
30V 12A MOSFET Transistor
278-SIA469DJ-T1-GE3
30V 12A MOSFET Transistor 278-SIA469DJ-T1-GE3
Trans MOSFET P-CH 30V 12A 6-Pin PowerPAK SC-70 EP T/R Product overview: SIA469DJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA469DJ-T1-GE3 can be used for catalog matching and distributor lookup.

Trans MOSFET P-CH 30V 12A 6-Pin PowerPAK SC-70 EP T/R Product overview: SIA469DJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA469DJ-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, P-Ch, 30V, 12A, 150Deg C, 15.6W; Channel Type Vishay - 10AC9109 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 30V, 12A, 150Deg C, 15.6W; Channel Type Vishay
10AC9109
Mosfet, P-Ch, 30V, 12A, 150Deg C, 15.6W; Channel Type Vishay 10AC9109
MOSFET, P-CH, 30V, 12A, 150DEG C, 15.6W; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, P-CH, 30V, 12A, 150DEG C, 15.6W; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
SIA469DJ-T1-GE3
Triode/MOS Tube/Transistor >> MOSFETs SIA469DJ-T1-GE3
PowerPAK-SC-70-6-Sin gle MOSFETs ROHS

PowerPAK-SC-70-6-Single MOSFETs ROHS

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET -30V Vds 20V Vgs PowerPAK SC-70

MOSFET -30V Vds 20V Vgs PowerPAK SC-70

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIA469DJ-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIA469DJ-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIA469DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6

MOSFET P-CH 30V 12A PPAK SC70-6

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company LCSC Electronics Technology (HK) Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1277674-SIA469DJ-T1-GE3 SIA469DJ-T1-GE3DKR-ND SIA469DJ-T1-GE3 278-SIA469DJ-T1-GE3 10AC9109 SIA469DJ-T1-GE3 SIA469DJ-T1-GE3 SIA469DJ-T1-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs 30V 12A MOSFET Transistor Mosfet, P-Ch, 30V, 12A, 150Deg C, 15.6W; Channel Type Vishay Triode/MOS Tube/Transistor >> MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel P-Channel; P-Channel P-Channel
Package Type SOT3 PowerPAK® SC-70-6 PowerPAK® SC-70-6 Tape and Reel TO-3 PowerPAKR SC-70-6
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 12000 milliamps 12000 milliamps
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