Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIA467EDJ-T1-GE3

Win Source Part Number: 1277549-SIA467EDJ-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 6 V
Vgs (Max): ±8V
Temperature Range - Operating: -50°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 60 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIA467EDJ-T1-GE3CT,SIA467EDJ-T1-GE3DKR,SIA467EDJ-T1-GE3TR
Base Product Number: SIA467
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V

P-Channel 12V 31A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single