Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIA462DJ-T4-GE3

Description
Win Source Part Number: 1277517-SIA462DJ-T4- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 15 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIA462 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277517-SIA462DJ-T4-GE3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SIA462DJ-T4-GE3-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIA462DJ-T4-GE3 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
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Description
Win Source Part Number: 1277517-SIA462DJ-T4- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 15 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIA462 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277517-SIA462DJ-T4-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277517-SIA462DJ-T4-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277517-SIA462DJ-T4-GE3
Win Source Part Number: 1277517-SIA462DJ-T4- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 15 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIA462 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1277517-SIA462DJ-T4-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 15 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 58 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIA462
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - SIA462DJ-T4-GE3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIA462DJ-T4-GE3-ND
Single FETs, MOSFETs SIA462DJ-T4-GE3-ND
N-Channel 30V 12A (Ta), 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

N-Channel 30V 12A (Ta), 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIA462DJ-T4-GE3 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIA462DJ-T4-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIA462DJ-T4-GE3
MOSFET N-CH 30V 12A/12A PPAK

MOSFET N-CH 30V 12A/12A PPAK

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Technical Specifications

  Win Source Electronics DigiKey Acme Chip Technology Co., Limited
Product Category Transistors Transistors RF Transistors
Product Number 1277517-SIA462DJ-T4-GE3 SIA462DJ-T4-GE3-ND SIA462DJ-T4-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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