Vishay Precision Group Single FETs, MOSFETs SIA459EDJ-T1-GE3

Description
P-Channel 20V 9A (Tc) 2.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SC-70-6
Request a Quote Datasheet
Description
P-Channel 20V 9A (Tc) 2.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SC-70-6
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SIA459EDJ-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIA459EDJ-T1-GE3TR-ND
Single FETs, MOSFETs SIA459EDJ-T1-GE3TR-ND
P-Channel 20V 9A (Tc) 2.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SC-70-6

P-Channel 20V 9A (Tc) 2.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SC-70-6

Buy Now Datasheet
Single FETs, MOSFETs - SIA459EDJ-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIA459EDJ-T1-GE3DKR-ND
Single FETs, MOSFETs SIA459EDJ-T1-GE3DKR-ND
P-Channel 20V 9A (Tc) 2.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SC-70-6

P-Channel 20V 9A (Tc) 2.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SC-70-6

Buy Now Datasheet
Single FETs, MOSFETs - SIA459EDJ-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIA459EDJ-T1-GE3CT-ND
Single FETs, MOSFETs SIA459EDJ-T1-GE3CT-ND
P-Channel 20V 9A (Tc) 2.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SC-70-6

P-Channel 20V 9A (Tc) 2.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SC-70-6

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA459EDJ-T1-GE3 - 1096378-SIA459EDJ-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA459EDJ-T1-GE3
1096378-SIA459EDJ-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA459EDJ-T1-GE3 1096378-SIA459EDJ-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1096378-SIA459EDJ-T1 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: PowerPAK SC-70-6 Single Dimension: PowerPAK SC-70-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 1.2V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 885pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 35 mOhm @ 5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096378-SIA459EDJ-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Single
Dimension: PowerPAK SC-70-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 885pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 35 mOhm @ 5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SIA459EDJ-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIA459EDJ-T1-GE3
Single FETs, MOSFETs SIA459EDJ-T1-GE3
MOSFET P-CH 20V 9A PPAK SC70-6

MOSFET P-CH 20V 9A PPAK SC70-6

Supplier's Site Datasheet
MOSFET -20V Vds 12V Vgs PowerPAK SC-70

MOSFET -20V Vds 12V Vgs PowerPAK SC-70

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIA459EDJ-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIA459EDJ-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIA459EDJ-T1-GE3
MOSFET P-CH 20V 9A PPAK SC70-6

MOSFET P-CH 20V 9A PPAK SC70-6

Supplier's Site
Mosfet Transistor, P Channel, -9 A, -20 V, 0.028 Ohm, -4.5 V Rohs Compliant Vishay - 40X8666 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, -9 A, -20 V, 0.028 Ohm, -4.5 V Rohs Compliant Vishay
40X8666
Mosfet Transistor, P Channel, -9 A, -20 V, 0.028 Ohm, -4.5 V Rohs Compliant Vishay 40X8666
MOSFET Transistor, P Channel, -9 A, -20 V, 0.028 ohm, -4.5 V RoHS Compliant: Yes

MOSFET Transistor, P Channel, -9 A, -20 V, 0.028 ohm, -4.5 V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SIA459EDJ-T1-GE3TR-ND 1096378-SIA459EDJ-T1-GE3 SIA459EDJ-T1-GE3 SIA459EDJ-T1-GE3 SIA459EDJ-T1-GE3 40X8666
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA459EDJ-T1-GE3 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, P Channel, -9 A, -20 V, 0.028 Ohm, -4.5 V Rohs Compliant Vishay
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel P-Channel
Package Type PowerPAK® SC-70-6 SOT3; PowerPAK SC-70-6 Single PowerPAK® SC-70-6 PowerPAKR SC-70-6 TO-3
V(BR)DSS 20 volts 20 volts
PD 2900 to 15600 milliwatts 2900 milliwatts
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