MOSFET P-CH 20V 9A PPAK SC70-6
Manufacturer: Vishay
Win Source Part Number: 1096378-SIA459EDJ-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Single
Dimension: PowerPAK SC-70-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 885pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 35 mOhm @ 5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
P-Channel 20V 9A (Tc) 2.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SC-70-6
P-Channel 20V 9A (Tc) 2.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SC-70-6
P-Channel 20V 9A (Tc) 2.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SC-70-6
MOSFET Transistor, P Channel, -9 A, -20 V, 0.028 ohm, -4.5 V RoHS Compliant: Yes
MOSFET P-CH 20V 9A PPAK SC70-6
MOSFET -20V Vds 12V Vgs PowerPAK SC-70
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIA459EDJ-T1-GE3 | 1096378-SIA459EDJ-T1-GE3 | SIA459EDJ-T1-GE3TR-ND | 40X8666 | SIA459EDJ-T1-GE3 | SIA459EDJ-T1-GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA459EDJ-T1-GE3 | Single FETs, MOSFETs | Mosfet Transistor, P Channel, -9 A, -20 V, 0.028 Ohm, -4.5 V Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 20 volts | 20 volts | ||||
| IDSS | 9000 milliamps |
