Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA459EDJ-T1-GE3 SIA459EDJ-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 1096378-SIA459EDJ-T1 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: PowerPAK SC-70-6 Single Dimension: PowerPAK SC-70-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 1.2V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 885pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 35 mOhm @ 5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA459EDJ-T1-GE3 - 1096378-SIA459EDJ-T1-GE3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SIA459EDJ-T1-GE3TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SIA459EDJ-T1-GE3DKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SIA459EDJ-T1-GE3CT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SIA459EDJ-T1-GE3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIA459EDJ-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet Transistor, P Channel, -9 A, -20 V, 0.028 Ohm, -4.5 V Rohs Compliant Vishay - 40X8666 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 1096378-SIA459EDJ-T1 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: PowerPAK SC-70-6 Single Dimension: PowerPAK SC-70-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 1.2V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 885pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 35 mOhm @ 5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA459EDJ-T1-GE3 - 1096378-SIA459EDJ-T1-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA459EDJ-T1-GE3
1096378-SIA459EDJ-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA459EDJ-T1-GE3 1096378-SIA459EDJ-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1096378-SIA459EDJ-T1 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: PowerPAK SC-70-6 Single Dimension: PowerPAK SC-70-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 1.2V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 885pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 35 mOhm @ 5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096378-SIA459EDJ-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Single
Dimension: PowerPAK SC-70-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 885pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 35 mOhm @ 5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SIA459EDJ-T1-GE3TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIA459EDJ-T1-GE3TR-ND
Single FETs, MOSFETs SIA459EDJ-T1-GE3TR-ND
P-Channel 20V 9A (Tc) 2.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SC-70-6

P-Channel 20V 9A (Tc) 2.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SC-70-6

Buy Now Datasheet
Single FETs, MOSFETs - SIA459EDJ-T1-GE3DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIA459EDJ-T1-GE3DKR-ND
Single FETs, MOSFETs SIA459EDJ-T1-GE3DKR-ND
P-Channel 20V 9A (Tc) 2.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SC-70-6

P-Channel 20V 9A (Tc) 2.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SC-70-6

Buy Now Datasheet
Single FETs, MOSFETs - SIA459EDJ-T1-GE3CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIA459EDJ-T1-GE3CT-ND
Single FETs, MOSFETs SIA459EDJ-T1-GE3CT-ND
P-Channel 20V 9A (Tc) 2.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SC-70-6

P-Channel 20V 9A (Tc) 2.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SC-70-6

Buy Now Datasheet
Single FETs, MOSFETs - SIA459EDJ-T1-GE3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIA459EDJ-T1-GE3
Single FETs, MOSFETs SIA459EDJ-T1-GE3
MOSFET P-CH 20V 9A PPAK SC70-6

MOSFET P-CH 20V 9A PPAK SC70-6

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIA459EDJ-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIA459EDJ-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIA459EDJ-T1-GE3
MOSFET P-CH 20V 9A PPAK SC70-6

MOSFET P-CH 20V 9A PPAK SC70-6

Supplier's Site
Mosfet Transistor, P Channel, -9 A, -20 V, 0.028 Ohm, -4.5 V Rohs Compliant Vishay - 40X8666 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, -9 A, -20 V, 0.028 Ohm, -4.5 V Rohs Compliant Vishay
40X8666
Mosfet Transistor, P Channel, -9 A, -20 V, 0.028 Ohm, -4.5 V Rohs Compliant Vishay 40X8666
MOSFET Transistor, P Channel, -9 A, -20 V, 0.028 ohm, -4.5 V RoHS Compliant: Yes

MOSFET Transistor, P Channel, -9 A, -20 V, 0.028 ohm, -4.5 V RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SIA459EDJ-T1-GE3
MOSFET SIA459EDJ-T1-GE3
MOSFET -20V Vds 12V Vgs PowerPAK SC-70

MOSFET -20V Vds 12V Vgs PowerPAK SC-70

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1096378-SIA459EDJ-T1-GE3 SIA459EDJ-T1-GE3TR-ND SIA459EDJ-T1-GE3 SIA459EDJ-T1-GE3 40X8666 SIA459EDJ-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA459EDJ-T1-GE3 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, P Channel, -9 A, -20 V, 0.028 Ohm, -4.5 V Rohs Compliant Vishay MOSFET
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel
V(BR)DSS 20 volts 20 volts
PD 2900 to 15600 milliwatts 2900 milliwatts
TJ -50 to 150 C (-58 to 302 F) -50 to 150 C (-58 to 302 F)
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