Single N-Ch PPAK SC70 200V 3.5Ohm @ 1.8V
Single N-Ch PPAK SC70 200V 3.5Ohm @ 1.8V
Single N-Ch PPAK SC70 200V 3.5Ohm @ 1.8V
N-Ch MOSFET, 200V, 2.6A, 1.38R, SC, SMT Product overview: SIA456DJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 2.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 2.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA456DJ-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028729-SIA456DJ-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Family Name: SiA456DJ
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Single
Dimension: PowerPAK SC-70-6
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 2.6A (Tc)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 14.5nC @ 10V
Max Input Capacitance: 350pF @ 100V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 1.38 Ohm @ 750mA, 4.5V
Introduction Date: September 01, 2008
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management, Portable Devices
N-Channel 200V 2.6A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
N-Channel 200V 2.6A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
N-Channel 200V 2.6A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
N CHANNEL MOSFET, 200V, 2.6A, SC-70; Transistor Polarity:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:2.6A; On Resistance Rds(on):3.5ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:16V RoHS Compliant: Yes
N CHANNEL MOSFET, 200V, 2.6A, SC-70, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:2.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:16V; Power Dissipation:3.5W RoHS Compliant: Yes
MOSFET, N-CH, 200V, 2.6A, SC-70-6; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.08ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.4V; Power RoHS Compliant: Yes
MOSFET N-CH 200V 2.6A PPAK SC70
MOSFET N-CH 200V 2.6A PPAK SC70
MOSFET 200V Vds 16V Vgs PowerPAK SC-70
| RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1807793P | 278-SIA456DJ-T1-GE3 | 028729-SIA456DJ-T1-GE3 | SIA456DJ-T1-GE3CT-ND | 03P9742 | 85W0170 | 61AC1918 | SIA456DJ-T1-GE3 | SIA456DJ-T1-GE3 | SIA456DJ-T1-GE3 |
| Product Name | IGBTs | 200V 2.6A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA456DJ-T1-GE3 | Single FETs, MOSFETs | N Channel Mosfet, 200V, 2.6A, Sc-70; Transistor Polarity Vishay | N Channel Mosfet, 200V, 2.6A, Sc-70, Full Reel; Channel Type Vishay | Mosfet, N-Ch, 200V, 2.6A, Sc-70-6; Transistor Polarity Vishay | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Package Type | PowerPAK SC-70-6L | SOT3; PowerPAK SC-70-6 Single | PowerPAK® SC-70-6 | TO-3 | TO-3 | TO-3 | PowerPAK® SC-70-6 | PowerPAKR SC-70-6 | ||
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| PD | 3500 milliwatts | 3500 to 19000 milliwatts | 3500 milliwatts | 3500 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||||
| V(BR)DSS | 200 volts | 200 volts |
