Manufacturer: Vishay
Win Source Part Number: 1096374-SIA444DJT-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Single
Dimension: PowerPAK SC-70-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 560pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 17 mOhm @ 7.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 30V 12A PPAK SC70-6 Product overview: SIA444DJT-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA444DJT-T1-GE3
N-Channel 30V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
MOSFET N-Channel 30 V (D-S)
MOSFET N-CH 30V 12A PPAK SC70-6
MOSFET N-CH 30V 12A PPAK SC70-6
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Utmel Electronic Limited | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1096374-SIA444DJT-T1-GE3 | 278-SIA444DJT-T1-GE3 | SIA444DJT-T1-GE3TR-ND | 880-SIA444DJT-T1-GE3 | SIA444DJT-T1-GE3 | SIA444DJT-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA444DJT-T1-GE3 | 30V 12A MOSFET Transistor | Single FETs, MOSFETs | MOSFET N-Channel 30 V (D-S) | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||
| PD | 3500 to 19000 milliwatts | 3500 milliwatts | 3500 milliwatts | 3500 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | SOT3; PowerPAK SC-70-6 Single | Tape & Reel (TR) | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 | PowerPAKR SC-70-6 |
