MOSFET N-CH 40V 12A PPAK SC70-6
40V 12A N-Channel MOSFET, 26mR Rds(on), SC-70-6L Product overview: SIA440DJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA440DJ-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 40V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
N-Channel 40V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
N-Channel 40V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
Manufacturer: Vishay
Win Source Part Number: 1096371-SIA440DJ-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Family Name: SiA440DJ
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Single
Dimension: PowerPAK SC-70-6
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 21.5nC @ 10V
Max Input Capacitance: 700pF @ 20V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 26 mOhm @ 9A, 10V
Introduction Date: June 24, 2013
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
MOSFET, N-CH, 40V, 12A, POWERPAK SC70; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes
MOSFET N-CH 40V 12A PPAK SC70-6
MOSFET 40V Vds 12V Vgs PowerPAK SC-70
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIA440DJ-T1-GE3 | 278-SIA440DJ-T1-GE3 | SIA440DJ-T1-GE3CT-ND | 1096371-SIA440DJ-T1-GE3 | 40X8664 | SIA440DJ-T1-GE3 | SIA440DJ-T1-GE3 |
| Product Name | Single FETs, MOSFETs | N-Channel 40V 12A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA440DJ-T1-GE3 | Mosfet, N-Ch, 40V, 12A, Powerpak Sc70; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 40 volts | 40 volts | |||||
| IDSS | 12000 milliamps | 12000 milliamps |
