Vishay Precision Group Single FETs, MOSFETs SIA440DJ-T1-GE3

Description
MOSFET N-CH 40V 12A PPAK SC70-6
Request a Quote Datasheet
Description
MOSFET N-CH 40V 12A PPAK SC70-6
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SIA440DJ-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIA440DJ-T1-GE3
Single FETs, MOSFETs SIA440DJ-T1-GE3
MOSFET N-CH 40V 12A PPAK SC70-6

MOSFET N-CH 40V 12A PPAK SC70-6

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA440DJ-T1-GE3 - 1096371-SIA440DJ-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA440DJ-T1-GE3
1096371-SIA440DJ-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA440DJ-T1-GE3 1096371-SIA440DJ-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1096371-SIA440DJ-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Family Name: SiA440DJ Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SC-70-6 Single Dimension: PowerPAK SC-70-6 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 1.4V @ 250μA Max Gate Charge: 21.5nC @ 10V Max Input Capacitance: 700pF @ 20V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 26 mOhm @ 9A, 10V Introduction Date: June 24, 2013 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 1096371-SIA440DJ-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Family Name: SiA440DJ
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Single
Dimension: PowerPAK SC-70-6
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 21.5nC @ 10V
Max Input Capacitance: 700pF @ 20V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 26 mOhm @ 9A, 10V
Introduction Date: June 24, 2013
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SIA440DJ-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIA440DJ-T1-GE3CT-ND
Single FETs, MOSFETs SIA440DJ-T1-GE3CT-ND
N-Channel 40V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

N-Channel 40V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

Buy Now Datasheet
Single FETs, MOSFETs - SIA440DJ-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIA440DJ-T1-GE3DKR-ND
Single FETs, MOSFETs SIA440DJ-T1-GE3DKR-ND
N-Channel 40V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

N-Channel 40V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

Buy Now Datasheet
Single FETs, MOSFETs - SIA440DJ-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIA440DJ-T1-GE3TR-ND
Single FETs, MOSFETs SIA440DJ-T1-GE3TR-ND
N-Channel 40V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

N-Channel 40V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

Buy Now Datasheet
Singapore
N-Channel 40V 12A MOSFET Transistor
278-SIA440DJ-T1-GE3
N-Channel 40V 12A MOSFET Transistor 278-SIA440DJ-T1-GE3
40V 12A N-Channel MOSFET, 26mR Rds(on), SC-70-6L Product overview: SIA440DJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA440DJ-T1-GE3 can be used for catalog matching and distributor lookup.

40V 12A N-Channel MOSFET, 26mR Rds(on), SC-70-6L Product overview: SIA440DJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA440DJ-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 40V Vds 12V Vgs PowerPAK SC-70

MOSFET 40V Vds 12V Vgs PowerPAK SC-70

Buy Now Datasheet
Mosfet, N-Ch, 40V, 12A, Powerpak Sc70; Channel Type Vishay - 40X8664 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 40V, 12A, Powerpak Sc70; Channel Type Vishay
40X8664
Mosfet, N-Ch, 40V, 12A, Powerpak Sc70; Channel Type Vishay 40X8664
MOSFET, N-CH, 40V, 12A, POWERPAK SC70; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes

MOSFET, N-CH, 40V, 12A, POWERPAK SC70; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIA440DJ-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIA440DJ-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIA440DJ-T1-GE3
MOSFET N-CH 40V 12A PPAK SC70-6

MOSFET N-CH 40V 12A PPAK SC70-6

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SIA440DJ-T1-GE3 1096371-SIA440DJ-T1-GE3 SIA440DJ-T1-GE3CT-ND 278-SIA440DJ-T1-GE3 SIA440DJ-T1-GE3 40X8664 SIA440DJ-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA440DJ-T1-GE3 Single FETs, MOSFETs N-Channel 40V 12A MOSFET Transistor MOSFET Mosfet, N-Ch, 40V, 12A, Powerpak Sc70; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 40 volts 40 volts
IDSS 12000 milliamps 12000 milliamps
Unlock Full Specs
to access all available technical data