N-CH MOSFET 8V 12A 36mR SC70-6L Surface Mount Product overview: SIA436DJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 8V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 8V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA436DJ-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 8V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
N-Channel 8V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
N-Channel 8V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
Manufacturer: Vishay
Win Source Part Number: 1096368-SIA436DJ-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Single
Dimension: PowerPAK SC-70-6
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 800mV @ 250μA
Max Gate Charge: 25.2nC @ 5V
Max Input Capacitance: 1508pF @ 4V
Maximum Gate-Source Voltage: ±5V
Maximum Rds On at Id,Vgs: 9.4 mOhm @ 15.7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
MOSFET 8V Vds 5V Vgs PowerPAK SC-70
MOSFET N-CH 8V 12A PPAK SC70-6
MOSFET N-CH 8V 12A PPAK SC70-6
MOSFET, N CHANNEL, 8V, 12A, POWERPAK SC70-6, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:19W RoHS Compliant: Yes
MOSFET, N-CH, 8V, 12A, 150DEG C, 19W; Channel Type:N Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:350mV RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIA436DJ-T1-GE3 | SIA436DJ-T1-GE3TR-ND | 1096368-SIA436DJ-T1-GE3 | SIA436DJ-T1-GE3 | SIA436DJ-T1-GE3 | SIA436DJ-T1-GE3 | 99W9414 | 63W4103 |
| Product Name | SMD 8V 12A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA436DJ-T1-GE3 | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 8V, 12A, Powerpak Sc70-6, Full Reel; Channel Type Vishay | Mosfet, N-Ch, 8V, 12A, 150Deg C, 19W; Channel Type Vishay |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 19000 milliwatts | 3500 to 19000 milliwatts | 3500 milliwatts | 19000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | PowerPAK® SC-70-6 | SOT3; PowerPAK SC-70-6 Single | PowerPAK® SC-70-6 | PowerPAKR SC-70-6 | TO-3 | TO-3 |
