30V 10.1A N-CH MOSFET, 20mR Rds On, SC-70 Product overview: SIA432DJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA432DJ-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028726-SIA432DJ-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Single
Dimension: PowerPAK SC-70-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 800pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 20 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
N-Channel 30V 12A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6
N-Channel 30V 12A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6
N-Channel 30V 12A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6
MOSFET 30V Vds 20V Vgs PowerPAK SC-70
MOSFET N-CH 30V 12A PPAK SC70-6
N CHANNEL MOSFET, 30V, 10.1A, SC-70; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:10.1A; On Resistance Rds(on):0.0158ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:20V RoHS Compliant: Yes
N CHANNEL MOSFET, 30V, 10.1A, SC-70, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:10.1A; On Resistance Rds(on):0.0158ohm; Transistor Mounting:Surface Mount; No. of Pins:6Pins RoHS Compliant: Yes
MOSFET, N CH, 30V, 12A, POWERPAK SC70; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0158ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIA432DJ-T1-GE3 | 028726-SIA432DJ-T1-GE3 | SIA432DJ-T1-GE3DKR-ND | SIA432DJ-T1-GE3 | SIA432DJ-T1-GE3 | 85W8930 | 97W2596 |
| Product Name | 30V 10.1A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA432DJ-T1-GE3 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 30V, 10.1A, Sc-70; Transistor Polarity Vishay | Mosfet, N Ch, 30V, 12A, Powerpak Sc70; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| PD | 19200 milliwatts | 3500 to 19200 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| V(BR)DSS | 30 volts |
