Vishay Precision Group 30V 10.1A MOSFET Transistor SIA432DJ-T1-GE3

Description
30V 10.1A N-CH MOSFET, 20mR Rds On, SC-70 Product overview: SIA432DJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA432DJ-T1-GE3 can be used for catalog matching and distributor lookup.
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Description
30V 10.1A N-CH MOSFET, 20mR Rds On, SC-70 Product overview: SIA432DJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA432DJ-T1-GE3 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore
30V 10.1A MOSFET Transistor
278-SIA432DJ-T1-GE3
30V 10.1A MOSFET Transistor 278-SIA432DJ-T1-GE3
30V 10.1A N-CH MOSFET, 20mR Rds On, SC-70 Product overview: SIA432DJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA432DJ-T1-GE3 can be used for catalog matching and distributor lookup.

30V 10.1A N-CH MOSFET, 20mR Rds On, SC-70 Product overview: SIA432DJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA432DJ-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA432DJ-T1-GE3 - 028726-SIA432DJ-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA432DJ-T1-GE3
028726-SIA432DJ-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA432DJ-T1-GE3 028726-SIA432DJ-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028726-SIA432DJ-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SC-70-6 Single Dimension: PowerPAK SC-70-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 800pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 20 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028726-SIA432DJ-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Single
Dimension: PowerPAK SC-70-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 800pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 20 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SIA432DJ-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIA432DJ-T1-GE3DKR-ND
Single FETs, MOSFETs SIA432DJ-T1-GE3DKR-ND
N-Channel 30V 12A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6

N-Channel 30V 12A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6

Buy Now Datasheet
Single FETs, MOSFETs - SIA432DJ-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIA432DJ-T1-GE3CT-ND
Single FETs, MOSFETs SIA432DJ-T1-GE3CT-ND
N-Channel 30V 12A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6

N-Channel 30V 12A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6

Buy Now Datasheet
Single FETs, MOSFETs - SIA432DJ-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIA432DJ-T1-GE3TR-ND
Single FETs, MOSFETs SIA432DJ-T1-GE3TR-ND
N-Channel 30V 12A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6

N-Channel 30V 12A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6

Buy Now Datasheet
N Channel Mosfet, 30V, 10.1A, Sc-70; Transistor Polarity Vishay - 85W8930 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 30V, 10.1A, Sc-70; Transistor Polarity Vishay
85W8930
N Channel Mosfet, 30V, 10.1A, Sc-70; Transistor Polarity Vishay 85W8930
N CHANNEL MOSFET, 30V, 10.1A, SC-70; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:10.1A; On Resistance Rds(on):0.0158ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:20V RoHS Compliant: Yes

N CHANNEL MOSFET, 30V, 10.1A, SC-70; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:10.1A; On Resistance Rds(on):0.0158ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:20V RoHS Compliant: Yes

Supplier's Site
N Channel Mosfet, 30V, 10.1A, Sc-70, Full Reel; Transistor Polarity Vishay - 16P3619 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 30V, 10.1A, Sc-70, Full Reel; Transistor Polarity Vishay
16P3619
N Channel Mosfet, 30V, 10.1A, Sc-70, Full Reel; Transistor Polarity Vishay 16P3619
N CHANNEL MOSFET, 30V, 10.1A, SC-70, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:10.1A; On Resistance Rds(on):0.0158ohm; Transistor Mounting:Surface Mount; No. of Pins:6Pins RoHS Compliant: Yes

N CHANNEL MOSFET, 30V, 10.1A, SC-70, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:10.1A; On Resistance Rds(on):0.0158ohm; Transistor Mounting:Surface Mount; No. of Pins:6Pins RoHS Compliant: Yes

Supplier's Site
Mosfet, N Ch, 30V, 12A, Powerpak Sc70; Transistor Polarity Vishay - 97W2596 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 30V, 12A, Powerpak Sc70; Transistor Polarity Vishay
97W2596
Mosfet, N Ch, 30V, 12A, Powerpak Sc70; Transistor Polarity Vishay 97W2596
MOSFET, N CH, 30V, 12A, POWERPAK SC70; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0158ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, N CH, 30V, 12A, POWERPAK SC70; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0158ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 30V Vds 20V Vgs PowerPAK SC-70

MOSFET 30V Vds 20V Vgs PowerPAK SC-70

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIA432DJ-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIA432DJ-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIA432DJ-T1-GE3
MOSFET N-CH 30V 12A PPAK SC70-6

MOSFET N-CH 30V 12A PPAK SC70-6

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 278-SIA432DJ-T1-GE3 028726-SIA432DJ-T1-GE3 SIA432DJ-T1-GE3DKR-ND 85W8930 97W2596 SIA432DJ-T1-GE3 SIA432DJ-T1-GE3
Product Name 30V 10.1A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA432DJ-T1-GE3 Single FETs, MOSFETs N Channel Mosfet, 30V, 10.1A, Sc-70; Transistor Polarity Vishay Mosfet, N Ch, 30V, 12A, Powerpak Sc70; Transistor Polarity Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
PD 19200 milliwatts 3500 to 19200 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F)
V(BR)DSS 30 volts
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