Vishay Precision Group Single FETs, MOSFETs SIA426DJ-T1-GE3

Description
N-Channel 20V 4.5A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
Request a Quote Datasheet
Description
N-Channel 20V 4.5A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SIA426DJ-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIA426DJ-T1-GE3TR-ND
Single FETs, MOSFETs SIA426DJ-T1-GE3TR-ND
N-Channel 20V 4.5A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

N-Channel 20V 4.5A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA426DJ-T1-GE3 - 028721-SIA426DJ-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA426DJ-T1-GE3
028721-SIA426DJ-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA426DJ-T1-GE3 028721-SIA426DJ-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028721-SIA426DJ-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Family Name: SiA426DJ Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SC-70-6 Single Dimension: PowerPAK SC-70-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.5A (Tc) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 1020pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 23.6 mOhm @ 9.9A, 10V Alternative Parts (Cross-Reference): PMPB20UN; PMPB20UN,115; PMPB20XNEA; Introduction Date: July 29, 2008 ECCN: EAR99 Estimated EOL Date: Obsolete Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 028721-SIA426DJ-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Family Name: SiA426DJ
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Single
Dimension: PowerPAK SC-70-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.5A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 1020pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 23.6 mOhm @ 9.9A, 10V
Alternative Parts (Cross-Reference): PMPB20UN; PMPB20UN,115; PMPB20XNEA;
Introduction Date: July 29, 2008
ECCN: EAR99
Estimated EOL Date: Obsolete
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore, Singapore
20V 4.5A MOSFET Transistor
278-SIA426DJ-T1-GE3
20V 4.5A MOSFET Transistor 278-SIA426DJ-T1-GE3
MOSFET N-CH 20V 4.5A PPAK SC70-6 Product overview: SIA426DJ-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA426DJ-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V 4.5A PPAK SC70-6 Product overview: SIA426DJ-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA426DJ-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIA426DJ-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIA426DJ-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIA426DJ-T1-GE3
MOSFET N-CH 20V 4.5A PPAK SC70-6

MOSFET N-CH 20V 4.5A PPAK SC70-6

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SIA426DJ-T1-GE3TR-ND 028721-SIA426DJ-T1-GE3 278-SIA426DJ-T1-GE3 SIA426DJ-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA426DJ-T1-GE3 20V 4.5A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type PowerPAK® SC-70-6 SOT3; PowerPAK SC-70-6 Single Tape & Reel (TR) PowerPAKR SC-70-6
V(BR)DSS 20 volts
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