Vishay Intertechnology, Inc. Single FETs, MOSFETs SIA421DJ-T4-GE3

P-Channel 30 V MOSFET in a PowerPAK SC-70-6L package, measuring 2.05 mm by 2.05 mm, designed for load switching and buck conversion in portable devices. It has a drain-source on-state resistance of 0.035 Ω at -10 V gate-source voltage and 0.056 Ω at -4.5 V, with a continuous drain current of -7.9 A at 25 °C ambient. The device is lead-free and halogen-free, with a junction temperature range of -55 °C to 150 °C and thermal resistance of 28 °C/W junction-to-ambient. It meets RoHS standards.