Vishay Intertechnology, Inc. 20V 12A MOSFET Transistor SIA419DJ-T1-GE3

Description
MOSFET P-CH 20V 12A PPAK SC70-6 Product overview: SIA419DJ-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA419DJ-T1-GE3 can be used for catalog matching and distributor lookup.
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Description
MOSFET P-CH 20V 12A PPAK SC70-6 Product overview: SIA419DJ-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA419DJ-T1-GE3 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore
20V 12A MOSFET Transistor
278-SIA419DJ-T1-GE3
20V 12A MOSFET Transistor 278-SIA419DJ-T1-GE3
MOSFET P-CH 20V 12A PPAK SC70-6 Product overview: SIA419DJ-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA419DJ-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET P-CH 20V 12A PPAK SC70-6 Product overview: SIA419DJ-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA419DJ-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA419DJ-T1-GE3 - 106526-SIA419DJ-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA419DJ-T1-GE3
106526-SIA419DJ-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA419DJ-T1-GE3 106526-SIA419DJ-T1-GE3
Manufacturer: Vishay Win Source Part Number: 106526-SIA419DJ-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SC-70-6 Single Dimension: PowerPAK SC-70-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 850mV @ 250μA Max Gate Charge: 29nC @ 5V Max Input Capacitance: 1500pF @ 10V Maximum Gate-Source Voltage: ±5V Maximum Rds On at Id,Vgs: 30 mOhm @ 5.9A, 4.5V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 106526-SIA419DJ-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Single
Dimension: PowerPAK SC-70-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 850mV @ 250μA
Max Gate Charge: 29nC @ 5V
Max Input Capacitance: 1500pF @ 10V
Maximum Gate-Source Voltage: ±5V
Maximum Rds On at Id,Vgs: 30 mOhm @ 5.9A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIA419DJ-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIA419DJ-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIA419DJ-T1-GE3
MOSFET P-CH 20V 12A PPAK SC70-6

MOSFET P-CH 20V 12A PPAK SC70-6

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 278-SIA419DJ-T1-GE3 106526-SIA419DJ-T1-GE3 SIA419DJ-T1-GE3
Product Name 20V 12A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA419DJ-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 3500 milliwatts 3500 to 19000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type Tape & Reel (TR) SOT3; PowerPAK SC-70-6 Single PowerPAKR SC-70-6
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