The 1277586-SIA416DJ-T1-GE3 is an N-Channel MOSFET from Vishay Siliconix, designed for applications such as DC/DC converters and full-bridge converters. It features a maximum drain-source voltage (V_DS) of 100 V and a continuous drain current (I_D) rating of 11.3 A at a case temperature of 25 ¬8C. The on-state resistance (R_DS(on)) is specified at 83 mOc when V_GS is 10 V and I_D is 3.2 A, and 130 mOc at 4.5 V and 2.6 A. The device has a total gate charge (Q_g) of 10 nC at 10 V, with an input capacitance (C_iss) of 295 pF at 50 V. It operates over a temperature range of -55 ¬8C to 150 ¬8C and has a maximum power dissipation of 19 W at a case temperature of 25 ¬8C. The MOSFET is packaged in a PowerPAK SC-70-6 form factor, suitable for surface mount applications. This product is lead-free and halogen-free, aligning with modern environmental standards.
MOSFET N-CH 100V 11.3A PPAK
100V 11.3A N-CH MOSFET 83mR SC70-6L Surface Mount Product overview: SIA416DJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 100V, 11.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 100V, 11.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA416DJ-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 100V 11.3A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
N-Channel 100V 11.3A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
N-Channel 100V 11.3A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
Win Source Part Number: 1277586-SIA416DJ-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 71 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIA416DJT1GE3,SIA416
Base Product Number: SIA416
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET Transistor, N Channel, 11.3 A, 100 V, 0.068 ohm, 10 V, 1.6 V RoHS Compliant: Yes
MOSFET 100V Vds 20V Vgs PowerPAK SC-70
MOSFET N-CH 100V 11.3A SC70-6L
MOSFET N-CH 100V 11.3A PPAK
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SIA416DJ-T1-GE3 | 278-SIA416DJ-T1-GE3 | SIA416DJ-T1-GE3TR-ND | 1277586-SIA416DJ-T1-GE3 | 19X1926 | SIA416DJ-T1-GE3 | 880-SIA416DJ-T1-GE3 | SIA416DJ-T1-GE3 |
| Product Name | Single FETs, MOSFETs | SMD 100V 11.3A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet Transistor, N Channel, 11.3 A, 100 V, 0.068 Ohm, 10 V, 1.6 V Rohs Compliant Vishay | MOSFET | MOSFET N-CH 100V 11.3A SC70-6L | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||
| V(BR)DSS | 100 volts | 100 volts | ||||||
| IDSS | 11300 milliamps | |||||||
| PD | 3500 milliwatts | 19000 milliwatts | 3500 milliwatts |
