Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIA416DJ-T1-GE3

Description
Win Source Part Number: 1277586-SIA416DJ-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc) Rds On (Max) @ Id, Vgs: 83mOhm @ 3.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 50 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 71 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIA416DJT1GE3,SIA416 DJ-T1-GE3DKR,SIA416D J-T1-GE3CT,SIA416DJ- T1-GE3TR Base Product Number: SIA416 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277586-SIA416DJ-T1-GE3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SIA416DJ-T1-GE3TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SIA416DJ-T1-GE3DKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SIA416DJ-T1-GE3CT-ND - DigiKey
    DigiKey
  • Mosfet Transistor, N Channel, 11.3 A, 100 V, 0.068 Ohm, 10 V, 1.6 V Rohs Compliant Vishay - 19X1926 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIA416DJ-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-CH 100V 11.3A SC70-6L - 880-SIA416DJ-T1-GE3 - Utmel Electronic Limited
    Utmel Electronic Limited
  • Single FETs, MOSFETs - SIA416DJ-T1-GE3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
Win Source Part Number: 1277586-SIA416DJ-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc) Rds On (Max) @ Id, Vgs: 83mOhm @ 3.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 50 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 71 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIA416DJT1GE3,SIA416 DJ-T1-GE3DKR,SIA416D J-T1-GE3CT,SIA416DJ- T1-GE3TR Base Product Number: SIA416 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Datasheet
Datasheet Summary
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The 1277586-SIA416DJ-T1-GE3 is an N-Channel MOSFET from Vishay Siliconix, designed for applications such as DC/DC converters and full-bridge converters. It features a maximum drain-source voltage (V_DS) of 100 V and a continuous drain current (I_D) rating of 11.3 A at a case temperature of 25 °C. The on-state resistance (R_DS(on)) is specified at 83 mΩ when V_GS is 10 V and I_D is 3.2 A, and 130 mΩ at 4.5 V and 2.6 A. The device has a total gate charge (Q_g) of 10 nC at 10 V, with an input capacitance (C_iss) of 295 pF at 50 V. It operates over a temperature range of -55 °C to 150 °C and has a maximum power dissipation of 19 W at a case temperature of 25 °C. The MOSFET is packaged in a PowerPAK SC-70-6 form factor, suitable for surface mount applications. This product is lead-free and halogen-free, aligning with modern environmental standards.

Datasheet Summary
Powered by GS/AI

The 1277586-SIA416DJ-T1-GE3 is an N-Channel MOSFET from Vishay Siliconix, designed for applications such as DC/DC converters and full-bridge converters. It features a maximum drain-source voltage (V_DS) of 100 V and a continuous drain current (I_D) rating of 11.3 A at a case temperature of 25 °C. The on-state resistance (R_DS(on)) is specified at 83 mΩ when V_GS is 10 V and I_D is 3.2 A, and 130 mΩ at 4.5 V and 2.6 A. The device has a total gate charge (Q_g) of 10 nC at 10 V, with an input capacitance (C_iss) of 295 pF at 50 V. It operates over a temperature range of -55 °C to 150 °C and has a maximum power dissipation of 19 W at a case temperature of 25 °C. The MOSFET is packaged in a PowerPAK SC-70-6 form factor, suitable for surface mount applications. This product is lead-free and halogen-free, aligning with modern environmental standards.

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277586-SIA416DJ-T1-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277586-SIA416DJ-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277586-SIA416DJ-T1-GE3
Win Source Part Number: 1277586-SIA416DJ-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc) Rds On (Max) @ Id, Vgs: 83mOhm @ 3.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 50 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 71 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIA416DJT1GE3,SIA416 DJ-T1-GE3DKR,SIA416D J-T1-GE3CT,SIA416DJ- T1-GE3TR Base Product Number: SIA416 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1277586-SIA416DJ-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 71 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIA416DJT1GE3,SIA416DJ-T1-GE3DKR,SIA416DJ-T1-GE3CT,SIA416DJ-T1-GE3TR
Base Product Number: SIA416
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
SMD 100V 11.3A MOSFET Transistor
278-SIA416DJ-T1-GE3
SMD 100V 11.3A MOSFET Transistor 278-SIA416DJ-T1-GE3
100V 11.3A N-CH MOSFET 83mR SC70-6L Surface Mount Product overview: SIA416DJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 100V, 11.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 100V, 11.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA416DJ-T1-GE3 can be used for catalog matching and distributor lookup.

100V 11.3A N-CH MOSFET 83mR SC70-6L Surface Mount Product overview: SIA416DJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 100V, 11.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 100V, 11.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA416DJ-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SIA416DJ-T1-GE3TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIA416DJ-T1-GE3TR-ND
Single FETs, MOSFETs SIA416DJ-T1-GE3TR-ND
N-Channel 100V 11.3A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

N-Channel 100V 11.3A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

Buy Now Datasheet
Single FETs, MOSFETs - SIA416DJ-T1-GE3DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIA416DJ-T1-GE3DKR-ND
Single FETs, MOSFETs SIA416DJ-T1-GE3DKR-ND
N-Channel 100V 11.3A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

N-Channel 100V 11.3A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

Buy Now Datasheet
Single FETs, MOSFETs - SIA416DJ-T1-GE3CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIA416DJ-T1-GE3CT-ND
Single FETs, MOSFETs SIA416DJ-T1-GE3CT-ND
N-Channel 100V 11.3A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

N-Channel 100V 11.3A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SIA416DJ-T1-GE3
MOSFET SIA416DJ-T1-GE3
MOSFET 100V Vds 20V Vgs PowerPAK SC-70

MOSFET 100V Vds 20V Vgs PowerPAK SC-70

Buy Now Datasheet
Mosfet Transistor, N Channel, 11.3 A, 100 V, 0.068 Ohm, 10 V, 1.6 V Rohs Compliant Vishay - 19X1926 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 11.3 A, 100 V, 0.068 Ohm, 10 V, 1.6 V Rohs Compliant Vishay
19X1926
Mosfet Transistor, N Channel, 11.3 A, 100 V, 0.068 Ohm, 10 V, 1.6 V Rohs Compliant Vishay 19X1926
MOSFET Transistor, N Channel, 11.3 A, 100 V, 0.068 ohm, 10 V, 1.6 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 11.3 A, 100 V, 0.068 ohm, 10 V, 1.6 V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIA416DJ-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIA416DJ-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIA416DJ-T1-GE3
MOSFET N-CH 100V 11.3A PPAK

MOSFET N-CH 100V 11.3A PPAK

Supplier's Site
MOSFET N-CH 100V 11.3A SC70-6L - 880-SIA416DJ-T1-GE3 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 100V 11.3A SC70-6L
880-SIA416DJ-T1-GE3
MOSFET N-CH 100V 11.3A SC70-6L 880-SIA416DJ-T1-GE3
MOSFET N-CH 100V 11.3A SC70-6L

MOSFET N-CH 100V 11.3A SC70-6L

Supplier's Site
Single FETs, MOSFETs - SIA416DJ-T1-GE3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIA416DJ-T1-GE3
Single FETs, MOSFETs SIA416DJ-T1-GE3
MOSFET N-CH 100V 11.3A PPAK

MOSFET N-CH 100V 11.3A PPAK

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited ODG (Origin Data Global)
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1277586-SIA416DJ-T1-GE3 278-SIA416DJ-T1-GE3 SIA416DJ-T1-GE3TR-ND SIA416DJ-T1-GE3 19X1926 SIA416DJ-T1-GE3 880-SIA416DJ-T1-GE3 SIA416DJ-T1-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SMD 100V 11.3A MOSFET Transistor Single FETs, MOSFETs MOSFET Mosfet Transistor, N Channel, 11.3 A, 100 V, 0.068 Ohm, 10 V, 1.6 V Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 100V 11.3A SC70-6L Single FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel
Package Type SOT3 PowerPAK® SC-70-6 TO-3 PowerPAKR SC-70-6 PowerPAK® SC-70-6
PD 19000 milliwatts 3500 milliwatts 3500 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Packing Method Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR Tape Reel; Digi-Reel®
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