The SiA413DJ is a P-channel 12-V MOSFET designed for linear and switching applications, packaged in a SC70-6 case. It has a drain-source on-state resistance of 0.026 Ω at -4.5 V gate bias and -6.7 A drain current, with a gate threshold voltage of 0.79 V. The device supports pulsed operation with ≤ 300 µs pulse width and ≤ 2% duty cycle, and its SPICE model is optimized for temperature ranges from -55 to 125°C, modeling gate charge, transient response, and diode reverse recovery characteristics.
MOSFET P-CH 12V 12A SC70-6 Product overview: SIA413DJ-T4-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA413DJ-T4-GE3 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIA413DJ-T4-GE3 |
| Product Name | 12V 12A MOSFET Transistor |
| TJ | -55 to 150 C (-67 to 302 F) |
