P-CH MOSFET 12V 10A 19W 29mR SC Product overview: SIA413DJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 10A, 19W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 10A, 19W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA413DJ-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 106975-SIA413DJ-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Single
Dimension: PowerPAK SC-70-6
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 57nC @ 8V
Max Input Capacitance: 1800pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 29 mOhm @ 6.7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
P-Channel 12V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
P-Channel 12V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
P-Channel 12V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
MOSFET P-CH 12V 12A PPAK SC70-6
MOSFET 12V 12A 19W 29mohm @ 4.5V
P CHANNEL MOSFET, -12V, 12A, SC-70, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:8V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
P CHANNEL MOSFET, -12V, 12A, SC-70; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:8V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIA413DJ-T1-GE3 | 106975-SIA413DJ-T1-GE3 | SIA413DJ-T1-GE3DKR-ND | SIA413DJ-T1-GE3 | SIA413DJ-T1-GE3 | 16P3611 |
| Product Name | 12V 10A 19W MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA413DJ-T1-GE3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | P Channel Mosfet, -12V, 12A, Sc-70, Full Reel; Channel Type Vishay |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| PD | 19000 milliwatts | 3500 to 19000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||
| V(BR)DSS | 12 volts |
