Vishay Precision Group 12V 10A 19W MOSFET Transistor SIA413DJ-T1-GE3

Description
P-CH MOSFET 12V 10A 19W 29mR SC Product overview: SIA413DJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 10A, 19W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 10A, 19W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA413DJ-T1-GE3 can be used for catalog matching and distributor lookup.
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Description
P-CH MOSFET 12V 10A 19W 29mR SC Product overview: SIA413DJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 10A, 19W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 10A, 19W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA413DJ-T1-GE3 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
12V 10A 19W MOSFET Transistor
278-SIA413DJ-T1-GE3
12V 10A 19W MOSFET Transistor 278-SIA413DJ-T1-GE3
P-CH MOSFET 12V 10A 19W 29mR SC Product overview: SIA413DJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 10A, 19W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 10A, 19W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA413DJ-T1-GE3 can be used for catalog matching and distributor lookup.

P-CH MOSFET 12V 10A 19W 29mR SC Product overview: SIA413DJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 10A, 19W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 10A, 19W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA413DJ-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA413DJ-T1-GE3 - 106975-SIA413DJ-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA413DJ-T1-GE3
106975-SIA413DJ-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA413DJ-T1-GE3 106975-SIA413DJ-T1-GE3
Manufacturer: Vishay Win Source Part Number: 106975-SIA413DJ-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SC-70-6 Single Dimension: PowerPAK SC-70-6 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 57nC @ 8V Max Input Capacitance: 1800pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 29 mOhm @ 6.7A, 4.5V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 106975-SIA413DJ-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SC-70-6 Single
Dimension: PowerPAK SC-70-6
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 57nC @ 8V
Max Input Capacitance: 1800pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 29 mOhm @ 6.7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SIA413DJ-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIA413DJ-T1-GE3DKR-ND
Single FETs, MOSFETs SIA413DJ-T1-GE3DKR-ND
P-Channel 12V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

P-Channel 12V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

Buy Now Datasheet
Single FETs, MOSFETs - SIA413DJ-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIA413DJ-T1-GE3TR-ND
Single FETs, MOSFETs SIA413DJ-T1-GE3TR-ND
P-Channel 12V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

P-Channel 12V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

Buy Now Datasheet
Single FETs, MOSFETs - SIA413DJ-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIA413DJ-T1-GE3CT-ND
Single FETs, MOSFETs SIA413DJ-T1-GE3CT-ND
P-Channel 12V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

P-Channel 12V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIA413DJ-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIA413DJ-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIA413DJ-T1-GE3
MOSFET P-CH 12V 12A PPAK SC70-6

MOSFET P-CH 12V 12A PPAK SC70-6

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 12V 12A 19W 29mohm @ 4.5V

MOSFET 12V 12A 19W 29mohm @ 4.5V

Buy Now Datasheet
P Channel Mosfet, -12V, 12A, Sc-70, Full Reel; Channel Type Vishay - 16P3611 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -12V, 12A, Sc-70, Full Reel; Channel Type Vishay
16P3611
P Channel Mosfet, -12V, 12A, Sc-70, Full Reel; Channel Type Vishay 16P3611
P CHANNEL MOSFET, -12V, 12A, SC-70, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:8V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

P CHANNEL MOSFET, -12V, 12A, SC-70, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:8V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

Supplier's Site
P Channel Mosfet, -12V, 12A, Sc-70; Channel Type Vishay - 85W8929 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -12V, 12A, Sc-70; Channel Type Vishay
85W8929
P Channel Mosfet, -12V, 12A, Sc-70; Channel Type Vishay 85W8929
P CHANNEL MOSFET, -12V, 12A, SC-70; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:8V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

P CHANNEL MOSFET, -12V, 12A, SC-70; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:8V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-SIA413DJ-T1-GE3 106975-SIA413DJ-T1-GE3 SIA413DJ-T1-GE3DKR-ND SIA413DJ-T1-GE3 SIA413DJ-T1-GE3 16P3611
Product Name 12V 10A 19W MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIA413DJ-T1-GE3 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET P Channel Mosfet, -12V, 12A, Sc-70, Full Reel; Channel Type Vishay
Polarity P-Channel P-Channel; P-Channel P-Channel P-Channel
PD 19000 milliwatts 3500 to 19000 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F)
V(BR)DSS 12 volts
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