Vishay Intertechnology, Inc. Single FETs, MOSFETs SIA413ADJ-T1-GE3

P-Channel 12V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

P-Channel 12V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

P-Channel 12V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

Trans MOSFET P-CH 12V 10A 6-Pin PowerPAK SC-70 T/R Product overview: SIA413ADJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA413ADJ-T1-GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay Siliconix
Win Source Part Number: 712151-SIA413ADJ-T1-GE3
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PowerPAK SC-70-6 Single
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: PowerPAK SC-70-6
Power Dissipation (Maximum): 19W
Popularity: Low
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 12V
Id - Continuous Drain Current: 12A
Rds On (Maximum) at Id, Vgs: 29mOhm at 6.7A, 4.5V
Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 57nC at 8V
Gate Source Voltage (Maximum): ±8V
Input Capacitance (Ciss) (Maximum) at Vds: 1800pF at 10V