Vishay Intertechnology, Inc. FETs - Single - SIA413ADJ-T1-GE3 SIA413ADJ-T1-GE3

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 712151-SIA413ADJ-T1- GE3 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PowerPAK SC-70-6 Single Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: PowerPAK SC-70-6 Power Dissipation (Maximum): 19W Popularity: Low Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 12V Id - Continuous Drain Current: 12A Rds On (Maximum) at Id, Vgs: 29mOhm at 6.7A, 4.5V Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 57nC at 8V Gate Source Voltage (Maximum): ±8V Input Capacitance (Ciss) (Maximum) at Vds: 1800pF at 10V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 712151-SIA413ADJ-T1- GE3 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PowerPAK SC-70-6 Single Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: PowerPAK SC-70-6 Power Dissipation (Maximum): 19W Popularity: Low Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 12V Id - Continuous Drain Current: 12A Rds On (Maximum) at Id, Vgs: 29mOhm at 6.7A, 4.5V Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 57nC at 8V Gate Source Voltage (Maximum): ±8V Input Capacitance (Ciss) (Maximum) at Vds: 1800pF at 10V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - SIA413ADJ-T1-GE3 - 712151-SIA413ADJ-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - SIA413ADJ-T1-GE3
712151-SIA413ADJ-T1-GE3
FETs - Single - SIA413ADJ-T1-GE3 712151-SIA413ADJ-T1-GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 712151-SIA413ADJ-T1- GE3 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PowerPAK SC-70-6 Single Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: PowerPAK SC-70-6 Power Dissipation (Maximum): 19W Popularity: Low Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 12V Id - Continuous Drain Current: 12A Rds On (Maximum) at Id, Vgs: 29mOhm at 6.7A, 4.5V Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 57nC at 8V Gate Source Voltage (Maximum): ±8V Input Capacitance (Ciss) (Maximum) at Vds: 1800pF at 10V

Manufacturer: Vishay Siliconix
Win Source Part Number: 712151-SIA413ADJ-T1-GE3
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PowerPAK SC-70-6 Single
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: PowerPAK SC-70-6
Power Dissipation (Maximum): 19W
Popularity: Low
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 12V
Id - Continuous Drain Current: 12A
Rds On (Maximum) at Id, Vgs: 29mOhm at 6.7A, 4.5V
Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 57nC at 8V
Gate Source Voltage (Maximum): ±8V
Input Capacitance (Ciss) (Maximum) at Vds: 1800pF at 10V

Buy Now
Single FETs, MOSFETs - SIA413ADJ-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIA413ADJ-T1-GE3TR-ND
Single FETs, MOSFETs SIA413ADJ-T1-GE3TR-ND
P-Channel 12V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

P-Channel 12V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

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Single FETs, MOSFETs - SIA413ADJ-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIA413ADJ-T1-GE3CT-ND
Single FETs, MOSFETs SIA413ADJ-T1-GE3CT-ND
P-Channel 12V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

P-Channel 12V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

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Single FETs, MOSFETs - SIA413ADJ-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIA413ADJ-T1-GE3DKR-ND
Single FETs, MOSFETs SIA413ADJ-T1-GE3DKR-ND
P-Channel 12V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

P-Channel 12V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

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MOSFET -12V Vds 8V Vgs PowerPAK SC-70

MOSFET -12V Vds 8V Vgs PowerPAK SC-70

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIA413ADJ-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIA413ADJ-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIA413ADJ-T1-GE3
MOSFET P-CH 12V 12A PPAK SC70-6

MOSFET P-CH 12V 12A PPAK SC70-6

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 712151-SIA413ADJ-T1-GE3 SIA413ADJ-T1-GE3TR-ND SIA413ADJ-T1-GE3 SIA413ADJ-T1-GE3
Product Name FETs - Single - SIA413ADJ-T1-GE3 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 12 volts
PD 19000 milliwatts
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