Trans MOSFET N-CH 100V 5.4A 6-Pin PowerPAK SC-70 EP T/R Product overview: SIA110DJ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 5.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 5.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIA110DJ-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 100V 5.4A (Ta), 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
N-Channel 100V 5.4A (Ta), 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
N-Channel 100V 5.4A (Ta), 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
Win Source Part Number: 1092996-SIA110DJ-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 77 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIA110DJ-T1-GE3TR,SI
Base Product Number: SIA110
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
MOSFET N-CH 100V 5.4A/12A PPAK
MOSFET 100V Vds 20V Vgs PowerPAK SC-70
MOSFET, N-CH, 100V, 12A, 150DEG C, 19W; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIA110DJ-T1-GE3 | 742-SIA110DJ-T1-GE3CT-ND | 1092996-SIA110DJ-T1-GE3 | SIA110DJ-T1-GE3 | SIA110DJ-T1-GE3 | 78AC6485 |
| Product Name | 100V 5.4A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 100V, 12A, 150Deg C, 19W; Transistor Polarity Vishay |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 100 volts | 100 volts | ||||
| PD | 3500 milliwatts | 3500 to 19000 milliwatts | 3500 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | Tape and Reel | PowerPAK® SC-70-6 | SOT3 | PowerPAK® SC-70-6 | TO-3 |
