Power Field-Effect Transistor, Product overview: SI9948AEY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI9948AEY-T1-GE3
Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1093020-SI9948AEY-T1
Power Dissipation: 2.4 W
Resistance: 170 mΩ
Categories: Transistors - FETs, MOSFETs - RF
Popularity: Low
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 175 °C
RoHS: Non-Compliant
Min Operating Temperature: -55 °C
Element Configuration: Dual
Continuous Drain Current (ID): 2.6 A
Drain to Source Breakdown Voltage: 60 V
Drain to Source Resistance: 170 mΩ
Gate to Source Voltage (Vgs): 20 V
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | 285-SI9948AEY-T1-GE3 | 1093020-SI9948AEY-T1-GE3 |
| Product Name | MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9948AEY-T1-GE3 |
| Polarity | P-Channel |
