Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 028717-SI9945BDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.1W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 5.3A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 665pF @ 15V
Maximum Rds On at Id,Vgs: 58 mOhm @ 4.3A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500
MOSFET 2N-CH 60V 5.3A 8-SOIC
Trans MOSFET N-CH 60V 5.3A 8-Pin SOIC N T/R Product overview: SI9945BDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 5.3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 5.3A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI9945BDY-T1-GE3
MOSFET, Dual N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 46mohm, Id 5.3, SO-8, Pd 3.1W
MOSFET, DUAL N CH, 60V, 5.3A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:5.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):46mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V RoHS Compliant: Yes
MOSFET, DUAL N CHANNEL, 60V, 5.3A, SOIC-8, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:5.3A; On Resistance Rds(on):0.046ohm; Transistor Mounting:Surface Mount; No. of Pins:8PinsRoHS Compliant: Yes
MOSFET 2N-CH 60V 5.3A 8SOIC
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 5.3A I(D), 60V, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOP-8. FREE 2 YEAR RADWELL WARRANTY
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Allied Electronics, Inc. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | SI9945BDY-T1-GE3CT-ND | 028717-SI9945BDY-T1-GE3 | SI9945BDY-T1-GE3 | 278-SI9945BDY-T1-GE3 | 70026454 | SI9945BDY-T1-GE3 | 72R4255 | 15R5256 | SI9945BDY-T1-GE3 | 36339090 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9945BDY-T1-GE3 | FET, MOSFET Arrays | 60V 5.3A SOIC MOSFET Transistor | MOSFET, Dual N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 46mohm, Id 5.3, SO-8, Pd 3.1W | MOSFET | Mosfet, Dual N Ch, 60V, 5.3A, Soic-8; Transistor Polarity Vishay | Mosfet, Dual N Channel, 60V, 5.3A, Soic-8, Full Reel; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | Tape and Reel | TO-3 | TO-3 | ||||
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | ||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |||||||
| PD | 3100 milliwatts | 3.1 milliwatts | ||||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
