Vishay Precision Group FET, MOSFET Arrays SI9945BDY-T1-GE3

Description
Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SOIC
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SI9945BDY-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI9945BDY-T1-GE3CT-ND
FET, MOSFET Arrays SI9945BDY-T1-GE3CT-ND
Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - SI9945BDY-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI9945BDY-T1-GE3DKR-ND
FET, MOSFET Arrays SI9945BDY-T1-GE3DKR-ND
Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SOIC

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FET, MOSFET Arrays - SI9945BDY-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI9945BDY-T1-GE3TR-ND
FET, MOSFET Arrays SI9945BDY-T1-GE3TR-ND
Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9945BDY-T1-GE3 - 028717-SI9945BDY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9945BDY-T1-GE3
028717-SI9945BDY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9945BDY-T1-GE3 028717-SI9945BDY-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028717-SI9945BDY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 3.1W Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 5.3A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 665pF @ 15V Maximum Rds On at Id,Vgs: 58 mOhm @ 4.3A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500

Manufacturer: Vishay
Win Source Part Number: 028717-SI9945BDY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.1W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 5.3A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 665pF @ 15V
Maximum Rds On at Id,Vgs: 58 mOhm @ 4.3A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500

Buy Now Datasheet
FET, MOSFET Arrays - SI9945BDY-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI9945BDY-T1-GE3
FET, MOSFET Arrays SI9945BDY-T1-GE3
MOSFET 2N-CH 60V 5.3A 8-SOIC

MOSFET 2N-CH 60V 5.3A 8-SOIC

Supplier's Site Datasheet
Singapore
60V 5.3A SOIC MOSFET Transistor
278-SI9945BDY-T1-GE3
60V 5.3A SOIC MOSFET Transistor 278-SI9945BDY-T1-GE3
Trans MOSFET N-CH 60V 5.3A 8-Pin SOIC N T/R Product overview: SI9945BDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 5.3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 5.3A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI9945BDY-T1-GE3 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 60V 5.3A 8-Pin SOIC N T/R Product overview: SI9945BDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 5.3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 5.3A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI9945BDY-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET, Dual N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 46mohm, Id 5.3, SO-8, Pd 3.1W - 70026454 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Dual N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 46mohm, Id 5.3, SO-8, Pd 3.1W
70026454
MOSFET, Dual N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 46mohm, Id 5.3, SO-8, Pd 3.1W 70026454
MOSFET, Dual N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 46mohm, Id 5.3, SO-8, Pd 3.1W

MOSFET, Dual N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 46mohm, Id 5.3, SO-8, Pd 3.1W

Supplier's Site
MOSFET 60V Vds 20V Vgs SO-8

MOSFET 60V Vds 20V Vgs SO-8

Buy Now Datasheet
Mosfet, Dual N Ch, 60V, 5.3A, Soic-8; Transistor Polarity Vishay - 72R4255 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N Ch, 60V, 5.3A, Soic-8; Transistor Polarity Vishay
72R4255
Mosfet, Dual N Ch, 60V, 5.3A, Soic-8; Transistor Polarity Vishay 72R4255
MOSFET, DUAL N CH, 60V, 5.3A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:5.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):46mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V RoHS Compliant: Yes

MOSFET, DUAL N CH, 60V, 5.3A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:5.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):46mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, Dual N Channel, 60V, 5.3A, Soic-8, Full Reel; Transistor Polarity Vishay - 15R5256 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N Channel, 60V, 5.3A, Soic-8, Full Reel; Transistor Polarity Vishay
15R5256
Mosfet, Dual N Channel, 60V, 5.3A, Soic-8, Full Reel; Transistor Polarity Vishay 15R5256
MOSFET, DUAL N CHANNEL, 60V, 5.3A, SOIC-8, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:5.3A; On Resistance Rds(on):0.046ohm; Transistor Mounting:Surface Mount; No. of Pins:8PinsRoHS Compliant: Yes

MOSFET, DUAL N CHANNEL, 60V, 5.3A, SOIC-8, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:5.3A; On Resistance Rds(on):0.046ohm; Transistor Mounting:Surface Mount; No. of Pins:8PinsRoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI9945BDY-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI9945BDY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI9945BDY-T1-GE3
MOSFET 2N-CH 60V 5.3A 8SOIC

MOSFET 2N-CH 60V 5.3A 8SOIC

Supplier's Site
Transistor - 36339090 - Radwell International
Willingboro, NJ, United States
Transistor
36339090
Transistor 36339090
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 5.3A I(D), 60V, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOP-8. FREE 2 YEAR RADWELL WARRANTY

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 5.3A I(D), 60V, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOP-8. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Allied Electronics, Inc. VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number SI9945BDY-T1-GE3CT-ND 028717-SI9945BDY-T1-GE3 SI9945BDY-T1-GE3 278-SI9945BDY-T1-GE3 70026454 SI9945BDY-T1-GE3 72R4255 15R5256 SI9945BDY-T1-GE3 36339090
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9945BDY-T1-GE3 FET, MOSFET Arrays 60V 5.3A SOIC MOSFET Transistor MOSFET, Dual N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 46mohm, Id 5.3, SO-8, Pd 3.1W MOSFET Mosfet, Dual N Ch, 60V, 5.3A, Soic-8; Transistor Polarity Vishay Mosfet, Dual N Channel, 60V, 5.3A, Soic-8, Full Reel; Transistor Polarity Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO 8-SOIC (0.154", 3.90mm Width) Tape and Reel TO-3 TO-3
Polarity N-Channel N-Channel; 2 N-Channel (Dual) N-Channel N-Channel
V(BR)DSS 60 volts 60 volts 60 volts
PD 3100 milliwatts 3.1 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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