Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9945AEY-T1 SI9945AEY-T1

Description
Manufacturer: Vishay Win Source Part Number: 1096358-SI9945AEY-T1 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2.4W Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 3.7A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 20nC @ 10V Maximum Rds On at Id,Vgs: 80 mOhm @ 3.7A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 1096358-SI9945AEY-T1 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2.4W Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 3.7A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 20nC @ 10V Maximum Rds On at Id,Vgs: 80 mOhm @ 3.7A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance
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Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9945AEY-T1 - 1096358-SI9945AEY-T1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9945AEY-T1
1096358-SI9945AEY-T1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9945AEY-T1 1096358-SI9945AEY-T1
Manufacturer: Vishay Win Source Part Number: 1096358-SI9945AEY-T1 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2.4W Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 3.7A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 20nC @ 10V Maximum Rds On at Id,Vgs: 80 mOhm @ 3.7A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096358-SI9945AEY-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2.4W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 3.7A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 10V
Maximum Rds On at Id,Vgs: 80 mOhm @ 3.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - SI9945AEY-T1 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI9945AEY-T1
FET, MOSFET Arrays SI9945AEY-T1
MOSFET 2N-CH 60V 3.7A 8SOIC

MOSFET 2N-CH 60V 3.7A 8SOIC

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI9945AEY-T1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI9945AEY-T1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI9945AEY-T1
MOSFET 2N-CH 60V 3.7A 8SOIC

MOSFET 2N-CH 60V 3.7A 8SOIC

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1096358-SI9945AEY-T1 SI9945AEY-T1 SI9945AEY-T1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9945AEY-T1 FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; 2 N-Channel (Dual)
V(BR)DSS 60 volts 60 volts
PD 2400 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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