Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9936BDY-T1-GE3 SI9936BDY-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 128077-SI9936BDY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4.5A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 13nC @ 10V Maximum Rds On at Id,Vgs: 35 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 128077-SI9936BDY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4.5A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 13nC @ 10V Maximum Rds On at Id,Vgs: 35 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9936BDY-T1-GE3 - 128077-SI9936BDY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9936BDY-T1-GE3
128077-SI9936BDY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9936BDY-T1-GE3 128077-SI9936BDY-T1-GE3
Manufacturer: Vishay Win Source Part Number: 128077-SI9936BDY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4.5A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 13nC @ 10V Maximum Rds On at Id,Vgs: 35 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 128077-SI9936BDY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.5A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 13nC @ 10V
Maximum Rds On at Id,Vgs: 35 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - SI9936BDY-T1-GE3-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI9936BDY-T1-GE3-ND
FET, MOSFET Arrays SI9936BDY-T1-GE3-ND
Mosfet Array 2 N-Channel (Dual) 30V 4.5A 1.1W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 30V 4.5A 1.1W Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - SI9936BDY-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI9936BDY-T1-GE3
FET, MOSFET Arrays SI9936BDY-T1-GE3
MOSFET 2N-CH 30V 4.5A 8-SOIC

MOSFET 2N-CH 30V 4.5A 8-SOIC

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI9936BDY-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI9936BDY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI9936BDY-T1-GE3
MOSFET 2N-CH 30V 4.5A 8SOIC

MOSFET 2N-CH 30V 4.5A 8SOIC

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 128077-SI9936BDY-T1-GE3 SI9936BDY-T1-GE3-ND SI9936BDY-T1-GE3 SI9936BDY-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9936BDY-T1-GE3 FET, MOSFET Arrays FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; 2 N-Channel (Dual)
V(BR)DSS 30 volts 30 volts
PD 1100 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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