Vishay Intertechnology, Inc. FET, MOSFET Arrays SI9936BDY-T1-GE3

Mosfet Array 2 N-Channel (Dual) 30V 4.5A 1.1W Surface Mount 8-SOIC

2-Ch N-Ch JFET 30V 4.5A 35mR SO-8 Product overview: SI9936BDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI9936BDY-T1-GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 128077-SI9936BDY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.5A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 13nC @ 10V
Maximum Rds On at Id,Vgs: 35 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

MOSFET 2N-CH 30V 4.5A 8-SOIC