Vishay Intertechnology, Inc. FET, MOSFET Arrays SI9934BDY-T1-E3

Description
Mosfet Array 2 P-Channel (Dual) 12V 4.8A 1.1W Surface Mount 8-SOIC
Request a Quote Datasheet
Description
Mosfet Array 2 P-Channel (Dual) 12V 4.8A 1.1W Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SI9934BDY-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI9934BDY-T1-E3TR-ND
FET, MOSFET Arrays SI9934BDY-T1-E3TR-ND
Mosfet Array 2 P-Channel (Dual) 12V 4.8A 1.1W Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 12V 4.8A 1.1W Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9934BDY-T1-E3 - 140621-SI9934BDY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9934BDY-T1-E3
140621-SI9934BDY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9934BDY-T1-E3 140621-SI9934BDY-T1-E3
Manufacturer: Vishay Win Source Part Number: 140621-SI9934BDY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 4.8A Gate-Source Threshold Voltage: 1.4V @ 250μA Max Gate Charge: 20nC @ 4.5V Maximum Rds On at Id,Vgs: 35 mOhm @ 6.4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Application Field: Used in Power Management

Manufacturer: Vishay
Win Source Part Number: 140621-SI9934BDY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 4.8A
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 20nC @ 4.5V
Maximum Rds On at Id,Vgs: 35 mOhm @ 6.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management

Buy Now Datasheet
FET, MOSFET Arrays - SI9934BDY-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI9934BDY-T1-E3
FET, MOSFET Arrays SI9934BDY-T1-E3
MOSFET 2P-CH 12V 4.8A 8-SOIC

MOSFET 2P-CH 12V 4.8A 8-SOIC

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI9934BDY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI9934BDY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI9934BDY-T1-E3
MOSFET 2P-CH 12V 4.8A 8SOIC

MOSFET 2P-CH 12V 4.8A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI9934BDY-T1-E3TR-ND 140621-SI9934BDY-T1-E3 SI9934BDY-T1-E3 SI9934BDY-T1-E3
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9934BDY-T1-E3 FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO 8-SOIC (0.154", 3.90mm Width)
Polarity P-Channel P-Channel; 2 P-Channel (Dual)
V(BR)DSS 12 volts 12 volts
PD 1100 milliwatts
Unlock Full Specs
to access all available technical data